
Allicdata Part #: | DTC144WM3T5G-ND |
Manufacturer Part#: |
DTC144WM3T5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 260MW SOT723 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 260mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SOT-723 |
Base Part Number: | DTC144 |
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The DTC144WM3T5G is a Transistor - Bipolar (BJT) - Single, Pre-Biased type.
The DTC144WM3T5G is a powerful, high-frequency bipolar transistor ideal for applications requiring fast switching capabilities or high-output current drive. It is packaged in a lead (Pb) free TO-239 (TO-18) package with low-cost, low-cost mW power, high-gate protection and high-speed switching. Its maximum power dissipation is 250 mW across a wide temperature range of -55 to + 125°C, with a min/max collector-base voltage of 10/20 V.
The DTC144WM3T5G offers low-noise performance, low gain and low-threshold voltage, providing improved performance for lower power consumption and faster switching speeds. Additionally, it has an integrated on-chip gate-protection diodes protection up to 1A. It also provides a high frequency with low input capacitance of 2.6 pF.
The DTC144WM3T5G is suitable for general purpose power switching and logic applications, such as automotive parts, laser diode drivers, and high speed DC-DC converters.
The DTC144WM3T5G consists of an N-channel enhancement-mode power field-effect transistor mounted in a lead (Pb) free TO-239 (TO-18) package using high voltage silicon gate MOS technology. It is designed to be used in a wide range of applications, including high-voltage, high-power Metal–Oxide–Semiconductor (MOSFET) based circuits, as well as high-current bipolar power transistors. Its linear on resistance is low, with a maximum of 20-mΩ.
The working principle of the DTC144WM3T5G is based on the physics of bipolar junction transistor (BJT), which allows current to flow from the collector to the base when a voltage is applied between the base and the emitter. The gain is determined by the ratio of the current flowing from the collector (IC) to the current flowing from the emitter (IE). The DTC144WM3T5G has a gain of 1.2 and can handle a maximum collector current of 1.1A.
The DTC144WM3T5G is an ideal solution for low-power, high-performance, high-speed switching applications, providing high reliability and robustness under harsh environmental conditions. With its optimum performance, low noise and high-temperature range, the DTC144WM3T5G is a reliable and cost-effective solution for a wide range of applications.
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