DTC144WM3T5G Allicdata Electronics
Allicdata Part #:

DTC144WM3T5G-ND

Manufacturer Part#:

DTC144WM3T5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 260MW SOT723
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC144WM3T5G datasheetDTC144WM3T5G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
Base Part Number: DTC144
Description

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The DTC144WM3T5G is a Transistor - Bipolar (BJT) - Single, Pre-Biased type.

The DTC144WM3T5G is a powerful, high-frequency bipolar transistor ideal for applications requiring fast switching capabilities or high-output current drive. It is packaged in a lead (Pb) free TO-239 (TO-18) package with low-cost, low-cost mW power, high-gate protection and high-speed switching. Its maximum power dissipation is 250 mW across a wide temperature range of -55 to + 125°C, with a min/max collector-base voltage of 10/20 V.

The DTC144WM3T5G offers low-noise performance, low gain and low-threshold voltage, providing improved performance for lower power consumption and faster switching speeds. Additionally, it has an integrated on-chip gate-protection diodes protection up to 1A. It also provides a high frequency with low input capacitance of 2.6 pF.

The DTC144WM3T5G is suitable for general purpose power switching and logic applications, such as automotive parts, laser diode drivers, and high speed DC-DC converters.

The DTC144WM3T5G consists of an N-channel enhancement-mode power field-effect transistor mounted in a lead (Pb) free TO-239 (TO-18) package using high voltage silicon gate MOS technology. It is designed to be used in a wide range of applications, including high-voltage, high-power Metal–Oxide–Semiconductor (MOSFET) based circuits, as well as high-current bipolar power transistors. Its linear on resistance is low, with a maximum of 20-mΩ.

The working principle of the DTC144WM3T5G is based on the physics of bipolar junction transistor (BJT), which allows current to flow from the collector to the base when a voltage is applied between the base and the emitter. The gain is determined by the ratio of the current flowing from the collector (IC) to the current flowing from the emitter (IE). The DTC144WM3T5G has a gain of 1.2 and can handle a maximum collector current of 1.1A.

The DTC144WM3T5G is an ideal solution for low-power, high-performance, high-speed switching applications, providing high reliability and robustness under harsh environmental conditions. With its optimum performance, low noise and high-temperature range, the DTC144WM3T5G is a reliable and cost-effective solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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