DTC114ESATP

DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 5mA, 5V
Base Part Number:	DTC114
Supplier Device Package:	SPT
Package / Case:	SC-72 Formed Leads
Mounting Type:	Through Hole
Power - Max:	300mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	50mA
Transistor Type:	NPN - Pre-Biased
Part Status:	Obsolete
Packaging:	Tape & Box (TB)

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DTC114ESATP Application Field and Working Principle:The DTC114ESATP is a pre-biased single transistor for general-purpose applications. It is designed for use in low-noise and high-power amplifier circuits, as well as in voltage-controlled oscillators and analog switching circuits. This device is especially suitable for operating at high frequencies and temperatures, up to 150°C.This bipolar junction transistor (BJT) has three terminals, the emitter, the base and the collector, and includes both NPN and PNP type. It has a small signal current gain of 600-1000 that varies with the collector current. It has high frequency response simulated up to 1GHz and can be used for high frequency signal handling. It has a low-noise single offset, which maintains current balance across the output.The DTC114ESATP works by using forward-biased junction, providing a controlled avalanche by applying a specific voltage on the base and collector pins. The current gain, hFE, of the device is a function of the current through the collector and is determined by the size of the currents through the emitter and collector, controlling the amount of current that passes through the collector.The working ofbjt transisotr is based upon the principle of controlling the current flow by altering the voltage in the base and therefore the emitter. By varying the voltage applied at the base, the amount of current passed through is increased, which increases the current in the collector as well. There is a certain amount of voltage gain between the base and the collector. This increase in current results in a corresponding increase in the output voltage. Thus, with the appropriate configuration of the base and collector, amplifier circuits can be constructed.In applications, the DTC114ESATP provides a high current gain, low noise, high power and high frequency response. It can be used for a wide range of applications including general purpose amplifiers, analog switching circuits, voltage-controlled oscillators and voltage regulators.[1]In order to use the DTC114ESATP properly in these applications, it should be driven by a voltage source rather than a current source as the base current will control the output current. Additionally, the resistor ratios should be adjusted accordingly to ensure the desired current gain and output voltage.The DTC114ESATP is a very versatile device that can be used in many applications. Its small signal current gain and high frequency response make it the ideal device to use in applications requiring high-performance, low-noise amplifiers, analog switching circuits, voltage-controlled oscillators and voltage regulators.[1] J.D. Adamson, B.J. Morse, “Bipolar Transistors”, in Advanced Semiconductor Device Fundamentals, 2nd Edition, IEEE Press/John Wiley & Sons, New York, 2020.

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