Allicdata Part #: | DTC123EKAT146TR-ND |
Manufacturer Part#: |
DTC123EKAT146 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC123EKAT146 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTC123 |
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The DTC123EKAT146 is a single, pre-biased bipolar junction transistor (BJT). A BJT is an electronic component used for the transfer of electrical energy from one device to another. BJTs are able to both act as an amplifier and switch, making them a versatile component in various applications. This article will discuss the application field and working principle of the DTC123EKAT146.
The DTC123EKAT146 is designed primarily for use in small-signal analog circuits. Its high-speed switching capability and low power dissipation make it ideal for applications such as switching high-speed circuits, audio amplifiers and filters, and motor control.
In terms of working principle, the DTC123EKAT146 is a bipolar transistor, meaning it uses both a base and a collector. The base is used to control the current flowing through the transistor, while the collector provides a path for the current to flow. Both PN junctions of the transistor are created by a number of electron donors (or holes) and electron acceptors (or electrons). When a voltage is applied to the base of the transistor, it causes electrons to move from the collector to the base, creating a small current flowing from the collector to the base. The current then travels from the base to the emitter, thus creating a larger current from the collector to the emitter.
In operation, the DTC123EKAT146’s gate voltage must be greater than its base voltage for the transistor to operate properly. The DTC123EKAT146 is a pre-biased BJT, meaning that it’s bias is built into the device, resulting in improved performance and lower power dissipation. The device is designed to be operated in an environment with low power and high speed, allowing it to be used in a wide range of applications.
The DTC123EKAT146 is a versatile, low power-consuming component that can be used in a wide range of applications. Its high speed switching capability and pre-biased design make it an excellent choice for small-signal analog circuits, motor control and audio applications. Its low power consumption and ease of use make it a reliable and cost effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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