
Allicdata Part #: | DTC124XUAT106TR-ND |
Manufacturer Part#: |
DTC124XUAT106 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 0.02000 |
10 +: | $ 0.01940 |
100 +: | $ 0.01900 |
1000 +: | $ 0.01860 |
10000 +: | $ 0.01800 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Base Part Number: | DTC124 |
Supplier Device Package: | UMT3 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 50mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The DTC124XUAT106 is a single pre-biased transistor designed for a variety of applications that require minimal current consumption. The device is considered to be a high-performance transistor that is both thermally and mechanically stable. As a current limiting device, it is designed to offer a wide range of protection from a variety of dynamic loads, and helps maintain a reliable and consistent performance in many large-scale applications.
The transistor is classified as a bipolar junction transistor (BJT), which is a device that is based on the basic principles of electron flow between two semiconductor regions. This type of transistor consists of three sections, known as emitter, base, and collector. The transistor itself had a typical conductance of anywhere between 0.5 and 100 mA and an operating frequency up to 4 GHz, making it suitable for a wide range of applications.
The pre-biased feature of the transistor is an important feature when operating this device, as it ensures that the device is always on the ‘safe side’ when it comes to handling large dynamic loads. This feature is especially useful in applications that require multiple transistors to be operated at once, such as in multi-phase switching circuits. This feature also helps to reduce the sensitivity that this type of transistor has to a range of external factors, such as temperature and other environmental conditions.
As the name of the device implies, the DTC124XUAT106 is designed for a wide variety of applications, ranging from industrial and automotive uses, to telecommunications and medical purposes. As a single pre-biasing device, it can be used in both low- and high-side gate/drain circuits, or as a power amplifier with a wide range of load conditions. The transistor also works well with both lower- and higher-level control circuits, making it well-suited for many types of applications.
The operating principle of the DTC124XUAT106 is fairly simple. When its base is connected to a higher voltage than its emitter, current begins to flow from the emitter to the collector, via the emitter-base junction. As current passes through the collector, a voltage drop is created, thus allowing for a variety of regulated applications. In addition, the transistor also exhibits a high degree of frequency stability and reliability, allowing for optimal performance in a wide variety of conditions and applications.
Overall, the DTC124XUAT106 is a powerful and highly reliable bipolar junction transistor that is suitable for a variety of applications. Thanks to its pre-bias feature, the device is capable of handling dynamic loads with relative ease, while offering reliable and consistent performance in a variety of situations. With a high degree of frequency stability and reliability, it is well-suited for use in many different types of applications, including telecommunications, industrial, and medical applications.
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