| Allicdata Part #: | DTC115TKAT146TR-ND |
| Manufacturer Part#: |
DTC115TKAT146 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PREBIAS NPN 200MW SMT3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  DTC115TKAT146 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 3000 +: | $ 0.02193 |
| 6000 +: | $ 0.01978 |
| 15000 +: | $ 0.01720 |
| 30000 +: | $ 0.01548 |
| 75000 +: | $ 0.01376 |
| 150000 +: | $ 0.01147 |
Specifications
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
| Base Part Number: | DTC115 |
| Supplier Device Package: | SMT3 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type: | Surface Mount |
| Power - Max: | 200mW |
| Frequency - Transition: | 250MHz |
| Current - Collector Cutoff (Max): | 500nA (ICBO) |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
| Series: | -- |
| Resistor - Base (R1): | 100 kOhms |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Current - Collector (Ic) (Max): | 100mA |
| Transistor Type: | NPN - Pre-Biased |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Not For New Designs |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
Description
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The DTC115TKAT146 is a single pre-biased bipolar junction transistor (BJT). It is an ideal solution for all of your applications requiring low input bias current and a low power dissipation. This device offers superior performance with its wide range of features, including its low input bias current and its high power dissipation. In addition, it is offered in both low-side and high-side configurations, providing flexibility and reliability in applications ranging from power semiconductor to audio amplifiers. The DTC115TKAT146 is a NPN type (negative-type) bipolar junction transistor, which consists of two p-type semi-conductors and one n-type semiconductor device. As a result of this configuration, it has both electrical and thermal characteristics that make it an ideal solution for applications requiring low bias current, low power dissipation and a wide range of temperature ranges. The operation of the DTC115TKAT146 starts with a voltage applied across the base-emitter junction, creating a base-emitter junction current, I BE . When the base-emitter current flow reaches the threshold level, I C , the transistor is said to be in active conduction, allowing current to flow from the collector region to the emitter region. This collector current, I C , is the effective output of the active transistor. A voltage drop across the collector-emitter region, V CE , results in the output of the active transistor, which is what ultimately determines the gain of the circuit or device. The major advantage of the DTC115TKAT146 is its low input bias current and its low power consumption. It also offers superior performance with its wide range of features, including its low-side and high-side configurations. The low-side configuration allows a voltage drop across the collector-emitter region to be well below the cut-off level. This leads to lower power dissipation, thus increasing the overall efficiency of the device. The high-side configuration, on the other hand, allows for voltage drops across the collector-emitter region to be above the cut-off level, leading to higher power dissipation, thus reducing the overall efficiency of the device. The DTC115TKAT146 is an ideal device for applications requiring a low power consumption, low input bias current and a wide range of temperatures. Its wide range of features and its versatility make it an excellent choice for applications such as power semiconductors and audio amplifiers.The specific data is subject to PDF, and the above content is for reference
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