| Allicdata Part #: | DTC115TM3T5G-ND |
| Manufacturer Part#: |
DTC115TM3T5G |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PREBIAS NPN 0.26W SOT723 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  DTC115TM3T5G Datasheet/PDF |
| Quantity: | 1000 |
| 8000 +: | $ 0.02911 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 260mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | SOT-723 |
Description
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The DTC115TM3T5G is a single, pre-biased bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is composed of three independent NPN transistors housed in a TO-247 package. It has a maximum collector-emitter voltage of 30 V and a maximum collector-base voltage of 40 V. Its maximum power dissipation is 2.5 W and its maximum junction temperature is 150°C.
The DTC115TM3T5G is used in various applications such as signal switches, power amplifiers, and linear amplifiers. It can also be used in switch mode power supplies and switching regulators because of its high voltage rating and high current capability. It is also used in low-voltage applications, such as battery powered systems.
The working principle of the DTC115TM3T5G is based on the fact that when a voltage is applied to the base-emitter junction, it creates a current flow from the base to the emitter. This current acts like a signal diode, and the current flow can be controlled by varying the voltage applied to the base. The degree to which the current flow is controlled is referred to as the current gain. Generally, the higher the current gain, the better the performance of the transistor.
The DTC115TM3T5G is designed to be pre-biased, meaning that the base-emitter junction has already been applied a voltage. This allows it to start operating faster than a non-pre-biased transistor and eliminates the need to apply an external bias voltage in order to make the transistor function. It provides the current gain required to amplify signals and is more efficient than non-pre-biased transistors.
In addition to signal amplification, the DTC115TM3T5G can be used as a switch to control the flow of current in an electronic circuit. All three of its independent transistors can be used for this purpose. When a low voltage signal is applied to the input, it turns the transistor on, allowing currents to flow from the collector to the emitter. When the voltage signal is removed, the transistor turns off, preventing the flow of current. The electrical contacts of the transistor remain open so that no current flows.
In summary, the DTC115TM3T5G is a single, pre-biased bipolar junction transistor. It is used for a variety of applications, including signal switches, power amplifiers, linear amplifiers, and switch mode power supplies. It works on the principle of controlling the current flow between the base and emitter of the transistor. It can also be used as a switch to control the flow of current in an electronic circuit.
The specific data is subject to PDF, and the above content is for reference
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