DTC123EET1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DTC123EET1G is a single transistor device designed for use in a variety of electrical applications. It is a type of pre-biased bipolar junction transistor (BJT), meaning that it has been designed to work with a predetermined amount of base-to-collector bias voltage. The DTC123EET1G is capable of operating at a maximum voltage of 40 volts and a maximum frequency of up to 1 GHz.This type of transistor is ideal for many applications, as it is capable of providing low input/output capacitance, low leakage current and high gain. It is especially useful in applications that require high-speed switching and in circuits that are operated at high frequency, such as radio-frequency circuits.The transistor consists of three terminals: the emitter, the base and the collector. The emitter is the basic source of the current, while the base acts as the control element, controlling the flow of current between the emitter and the collector. The collector is the basic destination of the current, which is then supplied to the external circuit.The operation of the transistor is based on the principle of “majority carriers” which involves the movement of electron carriers in opposite directions. When an electric signal is applied to the base, it creates a small current of majority carriers which then flow from the emitter to the collector. This current is then amplified and supplied to the external circuit.The DTC123EET1G is designed to be able to handle the large voltage swings that occur in high frequency, high speed circuits. It is designed for high-precision switching applications, as well as for low-noise, low-distortion applications. In addition, it is suitable for use in battery-operated devices as it offers low gate leakage current.The DTC123EET1G is especially suitable for use in high-speed communication systems, as it has low input and output capacitance and low junction capacitance. It is also suitable for use in power amplification, low-frequency signal processing, radio-frequency signal processing and switching applications. In conclusion, the DTC123EET1G is a versatile, single transistor device that is suitable for use in a range of high-speed, high-frequency applications. Its pre-biased design ensures that it can handle large voltage swings and its low input/output capacitance and low gate leakage current make it suitable for use in battery-operated devices.

The specific data is subject to PDF, and the above content is for reference