Allicdata Part #: | DTC123EETLTR-ND |
Manufacturer Part#: |
DTC123EETL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 150MW EMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC123EETL Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Base Part Number: | DTC123 |
Supplier Device Package: | EMT3 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 20mA, 5V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DTC123EETL is a pre-biased bipolar junction transistor (BJT), specifically a single NPN device with an integrated base resistor. It is designed to reduce the amount of board space required for typical PCB applications. Its primary purpose is to connected high-voltage loads to low-voltage control signals, such as in industrial automation, power supply and motor control circuits.
This specific configuration of bipolar junction transistor requires a voltage supply, typically between 5 and 12 volts, for both the base and the collector. The base is the controlling terminal, it receives the low voltage control signal which serves as the input to this device. When the base voltage rises above a certain level, the transistor switches on, connecting the collector to the emitter, thus allowing current to flow through the load.
The base resistance is an important characteristic of the DTC123EETL, as it determines how much current must flow through the base in order to turn the transistor on. This current is referred to as the "turn-on current" or the "threshold current", and values range around 10µA to 100µA. The base resistor is configured to limit this current to the appropriate level, ensuring that the transistor switches on when it should and preventing overload.
The emitter of the DTC123EETL is connected to ground. This gives the device its pre-biased configuration, since the voltage on the emitter is already known when the base-emitter junction is forward biased. This simplifies the circuit design and allows for faster switching times between the on and off states.
The main advantage of this pre-biased BJT configuration is that it is fully isolated from the power supply. This allows the device to be used in isolated power supply applications as well as higher voltage applications such as motor control, etc. It also requires less board space and fewer additional components than a similar BJT configuration with an external base resistor.
In summary, the DTC123EETL is a single NPN pre-biased bipolar junction transistor. It is capable of connecting high-voltage loads to low-voltage control signals, while requiring less board space and eliminates the need for an external bias resistor. Its low turn-on current and ability to switch quickly makes it ideal for use in a wide range of applications, from industrial automation to motor control.
The specific data is subject to PDF, and the above content is for reference
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