Allicdata Part #: | DTC143EEBTLTR-ND |
Manufacturer Part#: |
DTC143EEBTL |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 150MW EMT3F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DTC143EEBTL Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.02511 |
6000 +: | $ 0.02183 |
15000 +: | $ 0.01855 |
30000 +: | $ 0.01746 |
75000 +: | $ 0.01637 |
150000 +: | $ 0.01455 |
Resistor - Emitter Base (R2): | 4.7 kOhms |
Base Part Number: | DTC143 |
Supplier Device Package: | EMT3F (SOT-416FL) |
Package / Case: | SC-89, SOT-490 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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DTC143EEBTL is a single, pre-biased Bipolar Junction Transistor (BJT) that is used to provide amplified signals in various applications. It is typically used as an amplifier and has a low on-state resistance and a high noise figure. The device is capable of switching at very high speeds, making it well-suited for circuits with high-frequency components.
The DTC143EEBTL is a Type 2 NPN BJT with a maximum collector current of 100mA and a maximum collector-emitter voltage of 30V. It also has an integrated ESD protection diode, which increases its operating safety. The device has an embedded gate that allows for faster switching and is designed for high-frequency applications.
The DTC143EEBTL is commonly used in audio amplifiers, decoupling amplifiers, and low-voltage power supplies. Audio amplifiers require a fast-switching transistor to amplify input signals. The device\'s low on-state resistance allows for faster signal transmission and the high noise figure makes it ideal for high-quality audio signals. Decoupling amplifiers utilize transistors with low-voltage operation, and the DTC143EEBTL fits this application, as it has a maximum collector-emitter voltage of 30V. It is also commonly used in low-voltage power supplies to provide a regulated output.
The working principle of the DTC143EEBTL is based on the junction between the N-type and P-type semiconductor materials. When these materials are joined together, current flow is possible due to the electron-hole pair formation. The N-type region has a surplus of electrons, while the P-type region has a deficiency of electrons. When a small voltage is applied across the two regions, current will flow and the device will switch on. Depending on the type of BJT, the current flow will be made possible by the majority or minority carrier transport.
The DTC143EEBTL is used in many applications due to its low on-state resistance, high noise figure, and high-frequency switching capabilities. It is used in audio amplifiers, decoupling amplifiers, and low-voltage power supplies, where it can provide amplified signals with minimal distortion. It utilizes P-N Junction technology to provide fast switching and current conduction, making it a useful tool in many different applications.
The specific data is subject to PDF, and the above content is for reference
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