DTC143XEBTL Allicdata Electronics
Allicdata Part #:

DTC143XEBTL-ND

Manufacturer Part#:

DTC143XEBTL

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC143XEBTL datasheetDTC143XEBTL Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02511
Stock 1000Can Ship Immediately
$ 0.03
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Base Part Number: DTC143
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The DTC143XEBTL is one of the most commonly used single-stage pre-biased transistors, and it is an ideal choice for applications that require high-current amplification and efficiency. This type of transistor has two main parts: an N-type gate and an S-type source. The N-type gate is responsible for controlling the current that passes through the transistor and can be biased to yield optimum performance. The S-type source is responsible for providing the current to the base of the transistor and serves as a voltage reference to ensure that the transistor operates properly and efficiently.The DTC143XEBTL has a very low on-state resistance (R DS(on)) of typically 0.25 ohms. This means that it can handle very high currents, up to a peak pulse of 7.5A. This makes it ideal for applications such as power control and motor control. The transistor has a break-before-make switching configuration, meaning that it will remain in the off position until the gate voltage exceeds the source voltage, at which point the transistor will turn on and start conducting current. This eliminates any shoot-through current and makes the transistor very reliable.Another main benefit of using the DTC143XEBTL is its high current gain. This means that even small input signals can produce a large output. This makes it especially useful in applications where large signals need to be amplified. It also has a low capacitance rating, which reduces the risk of interference and improves its overall performance. In terms of its operation, the DTC143XEBTL works in the same way as other single-stage pre-biased transistors. It consists of two main terminals, the Emitter and the Collector. The Collector is mainly used for current amplification and receives the input signal from the Emitter. Although the Collector is the main terminal, both Emitter and Collector are present and play a part in determining the output voltage. When the input voltage is applied to the Emitter, the voltage differential between the Emitter and Collector determines the output current. This can be calculated by the following equation:Output current= (Input Voltage - Collector to Emitter Voltage) x Transistor Current GainUsing the DTC143XEBTL as an example, the transistor current gain is typically 140. This means that for a 1V Input Voltage and a 2V Collector to Emitter Voltage, the output current will be 140mA.The DTC143XEBTL is also pre-biased, meaning that the input pin has a bias voltage already applied to it. This simplifies the design process and ensures that the transistor is always operating in its most efficient form.In conclusion, the DTC143XEBTL is an ideal choice for applications such as power control and motor control, due to its high current amplification, low on-state resistance and pre-biased configuration. It is also easy to use, as its operation is relatively easy to understand and calculate, making it a great choice for designing electronics.

The specific data is subject to PDF, and the above content is for reference

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