DTC143ZKAT246 Allicdata Electronics
Allicdata Part #:

DTC143ZKAT246-ND

Manufacturer Part#:

DTC143ZKAT246

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC143ZKAT246 datasheetDTC143ZKAT246 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: DTC143
Supplier Device Package: SMT3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The DTC143ZKAT246 is a single, pre-biased bipolar junction transistor designed for use in various applications. It is a common-emitter transistor with a low-voltage collector-emitter gate. The characteristics of this type of transistor make it well-suited for tasks such as boosting a weak audio signal or vibration sensing.

To understand the DTC143ZKAT246\'s application field and working principle, it is important to first understand how a bipolar junction transistor operates. In a bipolar junction transistor, there are two p-n junctions, or devices, between the source and collector. As voltage is applied to the source, current will flow through the base of the transistor, which is called the emitter. The current then passes through the collector and exits through the other side of the collector, which is called the emitter-collector path. The current in the emitter-collector path is amplified by the application of the external voltage.

The characteristics of the DTC143ZKAT246 allow it to be used in various applications. For example, it is frequently used in low-power switching circuits, such as those found in microphones and telephones. The bipolar junction transistor is also used in RF amplifier and oscillator circuits. These circuits are usually very small and require a transistor with a very high gain and low noise. As the DTC143ZKAT246 is designed to provide a high gain and low noise, it is well-suited for these types of applications.

The DTC143ZKAT246 is pre-biased at a relatively low voltage. This feature provides several advantages. First, it simplifies circuit design. It also allows for efficient use of power. The pre-biased design also reduces the amount of energy required for operation, which can be beneficial in applications where battery life is a concern.

In addition to the applications mentioned above, the DTC143ZKAT246 can also be used in a variety of other applications. The low supply voltage also makes this device suitable for low voltage or battery operated applications. The DTC143ZKAT246 can also be used in signal amplification for communications and data processing.

In summary, the DTC143ZKAT246 is a single, pre-biased bipolar junction transistor designed for use in various applications. With its low voltage characteristics and high gain, the DTC143ZKAT246 is well-suited for tasks such as boosting a weak audio signal or vibration sensing. It is also suitable for applications such as low-power switching circuits, RF amplifier and oscillator circuits, and signal amplification for communications and data processing.

The specific data is subject to PDF, and the above content is for reference

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