DTC144EMT2L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	DTC144
Supplier Device Package:	VMT3
Package / Case:	SOT-723
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	30mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The DTC144EMT2L is a type of Pre-Biased, Single Bipolar Junction Transistor (BJT). This newly-developed product from Diodes Incorporated utilizes their latest technologies in order to increase performance, enhance reliability and improve cost effectiveness. The device is also designed to provide additional protection against electrostatic discharge (ESD) in accordance with various industry standards.The applications of the DTC144EMT2L include power management, audio power amplifiers, RF amplifier stages, switch mode power supply (SMPS) controllers, FET switching power stages and numerous other circuit designs. This transistor device is designed to provide the highest efficiency levels thanks to its low-temperature coefficient, low noise and low heat transfer effects.To understand how it works, it is important to first understand the concept of bipolar junction transistors. Bipolar junction transistors are an electronic device consisting of two base layers made from an insulating material and two outer layers made from an N-type or P-type semiconductor material. The arrangement of the layers allows for a current passing through one of the transistors to induce a voltage change in the other, thereby creating a current-controlled operation.The DTC144EMT2L is a single, pre-biased bipolar junction transistor that is designed to reduce the number of components required in a system. This is due to the device having a higher breakdown voltage than a standard BJT, allowing it to operate within a larger voltage range. Additionally, the transistor is designed with internal bias network circuitry and a temperature compensation to ensure specific levels of performance and reliability.The pre-biased design of the DTC144EMT2L helps to reduce the components normally required in a bipolar junction transistor. This also helps to decrease the overall size and cost of the entire system. Additionally, due to its internal circuitry and bias networks, the device can be used in various applications such as switch mode power supplies, audio power amplifiers and power management.Essentially, the DTC144EMT2L is a single, pre-biased bipolar junction transistor that offers a range of benefits which may make it an ideal choice for a variety of applications. Its pre-biased design eliminates the need for additional components, reducing the overall size and cost of the system. Additionally, its internal circuitry and bias networks also ensure reliable operation and performance. These features, combined with its large voltage range, make the DTC144EMT2L an interesting option for power management and other applications.

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