DTC144TET1G Allicdata Electronics
Allicdata Part #:

DTC144TET1G-ND

Manufacturer Part#:

DTC144TET1G

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 0.2W SC75
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTC144TET1G datasheetDTC144TET1G Datasheet/PDF
Quantity: 1000
15000 +: $ 0.01521
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75
Description

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The DTC144TET1G, a pre-biased single bipolar junction transistor (BJT), has many applications, which range from basic electronic components to specific military and industrial projects. As a pre-biased transistor, the DTC144TEY1G can operate with a fixed bias, allowing components to be quickly set up without needing repeated bias adjustments. The pre-biased characteristic of this transistor also allows the device to tolerate load variations while still operating at its optimal performance.

To understand the workings of the DTC144TET1G it is necessary to understand the basic configuration of a BJT. BJTs are transistors that use current flowing through a semiconductor to control the flow of current from a collector to an emitter. When a BJT is in a fully-forward state, current left the emitter to the collector, allowing the application of an electric current to the gate. This electric current causes the base-emitter junction to become forward biased, which in turn enables current to flow from the collector to the emitter.

The operating mode of the DTC144TET1G is determined by the bias voltage applied to it. Depending on the chosen mode, the transistor can either saturate or operate in a triode region. If the bias voltage is too high, the transistor will enter into a saturated state, where the collector current will remain unlimited and operate at maximum power. On the other hand, if the bias voltage is too low, the transistor will enter into the triode region, where it will be able to control the current flow by virtue of its current gain.

The most common applications of the DTC144TET1G include amplifiers, timers, oscillators, switch control, and analog signal processing. The device has also been used in a variety of military and industrial applications such as pulse generators and binary logic circuits. The transistor is also very reliable due to its high frequency response and can be used in high-frequency applications such as in radio transmitters.

In conclusion, the DTC144TET1G is a single pre-biased bipolar junction transistor with a wide range of applications from basic electronic circuits to military and industrial systems. The device can operate with a fixed bias enabling components to be quickly set up, and it can also tolerate load variations while staying at its optimal performance. The most common applications of the DTC144TET1G include amplifiers, timers, oscillators, switch control, and analog signal processing, and it is also very reliable due to its high frequency response.

The specific data is subject to PDF, and the above content is for reference

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