Allicdata Part #: | EDB5432BEBH-1DAAT-F-D-ND |
Manufacturer Part#: |
EDB5432BEBH-1DAAT-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) P... |
DataSheet: | EDB5432BEBH-1DAAT-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 512Mb (16M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
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EDB5432BEBH-1DAAT-F-D represents a special type of memory module, which is widely used in different kinds of digital systems. This type of module is mainly used for storing data and instructions. It is a heterogeneous memory module, consisting of various types of memory chips, such as DRAM, SRAM, EEPROM, and Flash memory.
In terms of application field, EDB5432BEBH-1DAAT-F-D memory module can be used in many applications. It is especially suitable for digital systems with high storage need, such as servers, data storage systems, digital signal processors, and embedded systems. It can also be used for industrial and military systems, as well as in medical applications. Moreover, EDB5432BEBH-1DAAT-F-D memory can be used in embedded applications, such as server networks, industrial automation systems, and communication systems.
EDB5432BEBH-1DAAT-F-D memory module works according to an asynchronous dynamic RAM architecture. The module contains four DRAM chips, which are connected to the system address and control signals through an array of transceivers. The system supplies an address signal and a clock signal to the memory module, and the module generates a row address strobe (RAS) and a column address strobe (CAS). These strobes are used to activate the row and column of the memory module, which stores the data and instruction on it. The memory module is also equipped with a memory controller, which manages the memory access operations.
The data stored on EDB5432BEBH-1DAAT-F-D memory module is organized into pages, which can range from 8KB to 32KB in size. The pages are further divided into rows and columns. The data stored in the memory module can be accessed using various memory access techniques, such as Read and Write operations, burst access, and scatter/gather operations. In addition, the module also supports the execution of both single-threaded and multi-threaded programs.
Overall, EDB5432BEBH-1DAAT-F-D memory module is a reliable and efficient memory solution for a wide range of applications. It is suitable for applications that require high performance and a large amount of memory. With its asynchronous dynamic RAM architecture and various memory access techniques, EDB5432BEBH-1DAAT-F-D memory is an excellent choice for a wide range of digital systems and embedded applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EDB5432BEBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEPA-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEPA-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
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