EDB5432BEPA-1DAAT-F-R TR Allicdata Electronics
Allicdata Part #:

EDB5432BEPA-1DAAT-F-RTR-ND

Manufacturer Part#:

EDB5432BEPA-1DAAT-F-R TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 168WFBGA
More Detail: SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) P...
DataSheet: EDB5432BEPA-1DAAT-F-R TR datasheetEDB5432BEPA-1DAAT-F-R TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (16M x 32)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)
Description

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The EDB5432BEPA-1DAAT-F-R TR is a Memory used in applications where weight, power and real estate footprint are important factors. It is an ideal choice for laptops and other portable computing applications.

This Memory is a Double Data Rate (DDR) type, which means it is capable of transferring data twice as fast as a Single Data Rate (SDR) Memory. The EDB5432BEPA-1DAAT-F-R TR Memory is a third-generation technology that offers exceptional speed, improved energy efficiency and enhanced features such as enhanced cyclic redundancy check (ECRC) and on-die terminations (ODT).

The EDB5432BEPA-1DAAT-F-R TR Memory has a maximum transfer rate of 1866 megabits per second (Mbps), maximum power consumption of 18.5 watts, and has a form factor of 204-pin small outline dual in-line memory module (SODIMM). It is available in capacities of 2, 4, 8, and 16GB.

The EDB5432BEPA-1DAAT-F-R TR Memory has a wide range of applications, including gaming laptops, laptops with higher performance requirements, and other mobile applications. It is also used in a variety of applications that utilize high-resolution graphics, high-performance computing and memory intensive applications, such as software development and high-end 3D gaming.

The working principle of EDB5432BEPA-1DAAT-F-R TR Memory is based on the concept of DRAM (Dynamic Random Access Memory). DRAM is a type of memory that stores data in an array of memory cells which can be accessed randomly by the processor. These memory cells are made up of cells containing a bit each, with each bit representing a single data element. DRAM stores the data in an array of memory cells consisting of transistors, capacitors and logic circuits. The transistors are used to determine the state of the cell, while the capacitors are used to store information in the form of electrical charge. The logic circuits are responsible for the actual transferring of data between memory cells.

When the processor needs to access data stored in the Memory, it sends out a read request, telling the Memory what location to retrieve the data from. The Memory then retrieves the correct data from the requested address and returns it to the processor in the form of an electrical signal. This signal is then interpreted by the processor as the requested data. Writing works in a similar fashion. The processor sends out a write request and the Memory stores the data sent by the processor in the requested location.

The EDB5432BEPA-1DAAT-F-R TR Memory is a very versatile and reliable type of Memory, offering excellent speed and power efficiency. It is suitable for a wide range of applications that require quick transfer of data and better energy efficiency, making it an ideal choice for laptop and portable computing applications.

The specific data is subject to PDF, and the above content is for reference

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