Allicdata Part #: | EDB5432BEBH-1DAAT-F-RTR-ND |
Manufacturer Part#: |
EDB5432BEBH-1DAAT-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) P... |
DataSheet: | EDB5432BEBH-1DAAT-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 512Mb (16M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
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The EDB5432BEBH-1DAAT-F-R TR is a dynamic random access memory (DRAM). DRAM is a type of memory that stores information in electronic circuits. It is an asynchronous memory device, meaning that it can be accessed at any time without waiting for the processor’s clock cycle and can be addressed at random. DRAMs are faster, higher density and larger capacity than static random access memory (SRAM).
The EDB5432BEBH-1DAAT-F-R TR is a 256Mb synchronous DRAM with a low profile height (1.45mm) and a small form factor. It is composed of stacked chips, which makes it increasingly faster and more efficient for use in portable devices such as tablets and laptops. The EDB5432BEBH-1DAAT-F-R TR comes with a wide array of features, such as voltage regulation, temperature-controlled power reduction, and power-on reset. Additionally, it has a maximum operating frequency of 400 MHz, making it suitable for high-performance applications.
The EDB5432BEBH-1DAAT-F-R TR is commonly used in a variety of applications, including portable consumer electronic devices, automotive infotainment systems, and high-end server systems. It is designed to operate within a wide range of temperature and voltage, making it suitable for operating in harsh and extreme environmental conditions. Additionally, its low profile design makes it perfect for device miniaturization. It can also be used in high performance applications, such as gaming consoles and high-end graphic cards.
The EDB5432BEBH-1DAAT-F-R TR is a synchronous DRAM memory device, meaning that it is synchronized with an external clock signal. This enables it to run faster than asynchronous DRAM devices. It works by storing information as electrical charges on an array of capacitors. When an address is sent to the device, the corresponding capacitor is discharged and its charge is measured, indicating the state of the bit. This process is then repeated for each address location.
The EDB5432BEBH-1DAAT-F-R TR is a reliable, high-performance memory device suitable for a wide range of applications. Its low profile design and wide temperature range make it suitable for portable devices, while its synchronous capability allows it to run at a faster speed. Additionally, it runs at a maximum frequency of 400 MHz, making it suitable for high-performance applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EDB5432BEBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEPA-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEPA-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
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