EDB5432BEPA-1DAAT-F-D Allicdata Electronics
Allicdata Part #:

EDB5432BEPA-1DAAT-F-D-ND

Manufacturer Part#:

EDB5432BEPA-1DAAT-F-D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 168WFBGA
More Detail: SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) P...
DataSheet: EDB5432BEPA-1DAAT-F-D datasheetEDB5432BEPA-1DAAT-F-D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (16M x 32)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-WFBGA (12x12)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

EDB5432BEPA-1DAAT-F-D is a type of memory. It stands for Electrical Double Balance (ED), 512Mb/64Mb, Burst Length 4, Pseudo-SRAM Bypass, Cycle Length 1, Differential Address/Data, Four Channel.

Basically, EDB5432BEPA-1DAAT-F-D memory are mainly used in computers, but can also be used in other digital items.

It has a relatively high speed, which makes it suitable for large-capacity data storage and fast access operations, such as converting analog signals into digital signals.

The working principle of EDB5432BEPA-1DAAT-F-D memory is based on the waveform and the operation attributes of memory.

In particular, the waveform of EDB5432BEPA-1DAAT-F-D memory is mainly determined by the waveform of the clock.

By controlling the logic level, voltage and frequency of the clock, the waveform of EDB5432BEPA-1DAAT-F-D memory can be accurately determined.

In addition, the operation attributes of EDB5432BEPA-1DAAT-F-D memory are mainly reflected in its data path, data comparison, data read and write, etc.

Data path refers to the direction of data flow and data stream.

For example, inputting the data from one channel and outputting the data from another channel.

At the same time, data comparison includes comparison of data in the same address and comparison of data in different addresses.

Read and write operations of EDB5432BEPA-1DAAT-F-D memory can be performed in two ways: random access or sequential.

In random access mode, data can be read and written randomly within a certain address range.

While in sequential mode, data can only be written sequentially and cannot be read randomly.

The speed of EDB5432BEPA-1DAAT-F-D memory is mainly determined by the data transfer rate, the drive circuit frequency, the operating temperature and the interface timing.

Data transfer rate determines the number of data transferred per unit time, which is related to the number of bits read and written per unit time.

The drive circuit frequency is the maximum number of times that the clock frequency can run without failure.

Operating temperature is the upper limit at which EDB5432BEPA-1DAAT-F-D memory can work effectively and safely.

The interface timing refers to the time interval between the consecutive transmission of data.

All these factors are important in determining the speed and efficient performance of EDB5432BEPA-1DAAT-F-D memory.

In conclusion, EDB5432BEPA-1DAAT-F-D memory is a type of memory with excellent performance and high speed.

Its main applications are in computers, but it can also be used in other digital items.

Its working principle is mainly determined by the waveform and operation attributes of the memory, as well as the speed and efficient performance of the memory, which are mainly determined by the data transfer rate, drive circuit frequency, operating temperature, and interface timing.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "EDB5" Included word is 11
Part Number Manufacturer Price Quantity Description
EDB5432BEBH-1DAAT-F-R TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 134...
EDB5432BEPA-1DAAT-F-R TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 168...
EDB5432BEBH-1DAAT-F-D Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 134...
EDB5432BEBH-1DAUT-F-D Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 134...
EDB5432BEBH-1DIT-F-D Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 134...
EDB5432BEPA-1DAAT-F-D Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 168...
EDB5432BEPA-1DIT-F-D Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 168...
EDB5432BEBH-1DAUT-F-R TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 134...
EDB5432BEBH-1DIT-F-R TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 134...
EDB5432BEPA-1DIT-F-R TR Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 168...
EDB5432BEPA-1DIT-F-R Micron Techn... 0.0 $ 1000 IC DRAM 512M PARALLEL 533...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics