EDB5432BEPA-1DIT-F-R

Series:	--
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR2
Memory Size:	512Mb (16M x 32)
Clock Frequency:	533MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TC)

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Memory: EDB5432BEPA-1DIT-F-R Application Field and Working Principle

Memories are a key component of almost every electronic system – they are what allow us to store data. EDB5432BEPA-1DIT-F-R is an FPGA-based low-voltage dynamic random access memory (LV-DRAM) which offers a variety of features, including increased speed, increased capacity, and low-voltage operation. This article will discuss the application field and working principle of EDB5432BEPA-1DIT-F-R.

Applications

EDB5432BEPA-1DIT-F-R is primarily used for embedded applications, due to its small size and high performance. It is designed for low-voltage operation, which makes it suitable for use in battery-operated devices. Furthermore, it is compatible with a wide range of SOCs, meaning it can be used in a variety of systems.The improved performance of EDB5432BEPA-1DIT-F-R compared to conventional DRAM makes it ideal for embedded programming. It has a much higher speed and capacity compared to conventional DRAM, and the low voltage makes it more energy efficient. Additionally, it is able to reach data transfer speeds of up to 6400 Mb/s, making it much faster than conventional DRAM.

Working Principle

EDB5432BEPA-1DIT-F-R is a FPGA-based memory designed around a “block-write” system. Data is stored in blocks, or “pages”, which allows for quick access and update operations. This is done by using a single command to write an entire block of data, rather than having to write each bit individually.Data can be read from and written to EDB5432BEPA-1DIT-F-R just like any other type of memory. However, the way in which data is stored in the memory means that it can be read and written far more quickly than conventional DRAM.The EDB5432BEPA-1DIT-F-R also uses a “burst mode” which allows the memory to output data in bursts rather than a single byte at a time. This reduces the time taken to read and write data significantly, as data can be read and written in one single burst rather than numerous smaller data transfers.

Conclusion

EDB5432BEPA-1DIT-F-R is a low-voltage FPGA-based DRAM designed for use in embedded applications. It offers a range of benefits, including increased speed, increased capacity, and low-voltage operation. It is able to read and write data in blocks using a single command, and is also able to use a “burst mode” to output data in bursts rather than one byte at a time. All of these features make EDB5432BEPA-1DIT-F-R an ideal choice for a variety of embedded projects.

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