Allicdata Part #: | EDB5432BEBH-1DAUT-F-RTR-ND |
Manufacturer Part#: |
EDB5432BEBH-1DAUT-F-R TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) P... |
DataSheet: | EDB5432BEBH-1DAUT-F-R TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 512Mb (16M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 125°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
EDB5432BEBH-1DAUT-F-R TR Application Field and Working Principle
The EDB5432BEBH-1DAUT-F-R TR is a type of memory used in various industrial and commercial applications. It is a type of non-volatile memory, meaning it retains data even when power is turned off. It is commonly used in embedded systems, where it can be used as a storage space for programs and data.
The EDB5432BEBH-1DAUT-F-R TR provides an extremely reliable memory solution for a wide range of industrial and commercial applications. Its features include high shock and vibration resistance, non-volatile data storage, and a broad operational temperature range. It can be used in a wide variety of applications, including industrial automation, medical equipment, automotive electronics, aviation systems, military/aerospace applications, and consumer electronics.
The working principle of the EDB5432BEBH-1DAUT-F-R TR is straightforward. It stores data in a series of memory cells, organized into a grid. Each cell is powered by a voltage-regulated power supply, which is adjusted according to the data stored in the cell. The power supply is connected to an internal control circuit, which monitors the cells and ensures their operational stability.
When data is written to the memory cell, an analog signal is formed, which is then converted to digital signals. The digital signal is then sent to the control circuit, which stores the data in the memory cell. When data is read from the memory cell, the same analog signal is produced and sent to the control circuit, which then decodes the signal and reads the data stored in the cell.
The EDB5432BEBH-1DAUT-F-R TR is a highly reliable memory device with a wide variety of applications. Its features make it well-suited for reliable data storage in rugged environments, and its low power consumption and broad operating temperature range make it ideal for a variety of industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EDB5432BEBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEPA-1DIT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEBH-1DAUT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEPA-1DIT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 168... |
EDB5432BEPA-1DIT-F-R | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 533... |
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