Allicdata Part #: | EDB5432BEBH-1DAUT-F-D-ND |
Manufacturer Part#: |
EDB5432BEBH-1DAUT-F-D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 134VFBGA |
More Detail: | SDRAM - Mobile LPDDR2 Memory IC 512Mb (16M x 32) P... |
DataSheet: | EDB5432BEBH-1DAUT-F-D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 512Mb (16M x 32) |
Clock Frequency: | 533MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 125°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
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The EDB5432BEBH-1DAUT-F-D memory is an integrated circuit with advanced features that provide persistent storage for processing and information. It has an advanced architecture which utilises multiple layers of transistors, capacitors, and logic built from sub-micron thin-film technology. The device can be used as a single package with one or more channels and combined with a range of external components to create memory modules with a wide range of applications.
The EDB5432BEBH-1DAUT-F-D memory is widely used in various electronic equipment such as servers, controllers, radio communications and multimedia applications. The most common application areas are military surveillance, telecommunications data networks, and high-end workstations. This memory is also commonly used in aerospace, industrial, medical, and automotive applications where its robust design and low-power consumption make it an ideal choice.
The EDB5432BEBH-1DAUT-F-D memory employs a highly reliable write-once read-once (WORO) protocol, to ensure its data is not corrupted and remains securely stored. This allows the device to store volumes of data for faster retrieval and makes it a reliable choice for mission critical applications. The device is also known for its excellent tolerance to vibration, shock, and electromagnetic interference making it a reliable choice for use in extreme environments.
The EDB5432BEBH-1DAUT-F-D memory has a built-in error-correction code (ECC) which provides data integrity, improving performance and allowing the device to store large amounts of data with very low overhead. Additionally, the device has a built-in test mode to allow the system to validate its operation and detect any hardware or software fault. Furthermore, the device can be configured to encrypt or decrypt data and support low-level operating system functions.
The EDB5432BEBH-1DAUT-F-D memory can access data either directly, in a linear fashion, or via a hierarchical manner, allowing scalability to different applications. This provides the flexibility to accommodate different power requirements such as low-power and high-speed operations, depending on the application. The device is generally used as a fast and reliable memory due to its high bandwidth and low access latency.
The EDB5432BEBH-1DAUT-F-D memory is designed to be highly reliable and efficient, so that it can serve a wide range of applications. Its highly reliable WORO protocol, built-in ECC, test mode and encryption/decryption capability make it an ideal choice for mission critical applications. Its scalability, low power requirement and low access latency also make it perfect for high-speed operations.
In conclusion, the EDB5432BEBH-1DAUT-F-D memory is a reliable and efficient device developed to provide persistent storage for different applications in many industries. Its multiple layers of transistors, capacitors, and logic help to ensure data integrity and low-power consumption. Its WORO protocol, ECC, test mode, and encryption/decryption feature also make it suitable for use in mission critical and high-speed operations.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EDB5432BEBH-1DAAT-F-R TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
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EDB5432BEBH-1DAAT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
EDB5432BEBH-1DAUT-F-D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 134... |
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