EDB5432BEPA-1DIT-F-D

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR2
Memory Size:	512Mb (16M x 32)
Clock Frequency:	533MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.14 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	168-WFBGA
Supplier Device Package:	168-WFBGA (12x12)

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Introduction

EDB5432BEPA-1DIT-F-D is an embedded memory device with features such as high memory capacity and data access speed. It is suitable for meeting the storage requirements of many embedded systems. This article will discuss the application field and working principle of EDB5432BEPA-1DIT-F-D in detail.

Application Fields

EDB5432BEPA-1DIT-F-D is an embedded memory device designed for specific systems and applications. It can provide excellent features for cloud storage systems, like ultra-high speed access and unlimited capacity expansion. EDB5432BEPA-1DIT-F-D is also suitable for automotive electronics, industrial automation, military and aerospace applications because of its excellent performance benefits.Integrated with low power consumption, EDB5432BEPA-1DIT-F-D offers superior performance stability, and offers strong resistance to interference. With the help of EDB5432BEPA-1DIT-F-D, a system can not only complete single-level data storage, but also connect multiple-level data evidence collection and storage. On the other hand, due to its physical properties, EDB5432BEPA-1DIT-F-D also offers significant advantages over traditional memory solutions.

Working Principle

EDB5432BEPA-1DIT-F-D is based on the same principle as simple DRAM (Dynamic Random Access Memory) with two main active parts. One is the main memory array, which stores the user data in the device\'s memory cells. The other is the memory controller, which is responsible for the data transfer between the main memory array and other external peripherals. In addition to the main memory array and the memory controller, EDB5432BEPA-1DIT-F-D also has a pseudo static memory control unit and a flash control unit, which are responsible for controlling the read and write operations. Furthermore, the device has an error correction circuit, a power management unit and a thermal control unit for protecting the system from failures and misoperation.When a user gives a "read data" instruction, the EDB5432BEPA-1DIT-F-D memory controller will identify the location of the data in the memory array and send the data to the external interface. Similarly, for a "write data" instruction, the EDB5432BEPA-1DIT-F-D memory controller will identify the location in the memory array and write the data to the memory array.

Conclusion

In conclusion, EDB5432BEPA-1DIT-F-D is a highly efficient embedded memory device with excellent features that make its suitable for various application fields such as cloud storage systems, automotive electronics, industrial automation, military and aerospace applications. The working principle of EDB5432BEPA-1DIT-F-D is based on the same principle as simple DRAM, which includes a main memory array, a memory controller, a pseudo static memory control unit, a flash control unit, an error correction circuit, a power management unit and a thermal control unit.

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