Allicdata Part #: | EGP10BEHE3/54-ND |
Manufacturer Part#: |
EGP10BEHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO204AL |
More Detail: | Diode Standard 100V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | EGP10BEHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 22pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | EGP10B |
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The EGP10BEHE3/54 diode is a single rectifier, a fundamental component in many electronic applications. A rectifier is an electrical device capable of converting AC to DC, with properties that make it suitable for a wide range of applications, from power rectification to signal separation.
The EGP10BEHE3/54 diode is a high-voltage, 10A Schottky rectifier, with a maximum forward voltage of 1.3V and a high surge current rating of 200A. It is designed to withstand a reverse voltage of 1000V, and is capable of providing excellent thermal performance in a variety of AC applications.
The main application field of the EGP10BEHE3/54 diode is power rectification. It is used in power supplies and switching mode power supplies (SMPS), converters, and dimmers in lighting systems. Its low forward voltage drop and high current carrying capability make it an ideal choice for high-efficiency AC to DC conversion.
It is also suitable for reverse current protection, low-voltage DC motor control, and as a switch for audio circuits. The high surge current rating makes it an ideal choice for applications that require reliable performance in harsh conditions. In addition, its low reverse leakage current makes it well-suited for applications requiring a high level of electrical noise immunity.
The working principle of the EGP10BEHE3/54 diode is based on the so-called PN junction. This junction is formed by joining two pieces of different semiconductor material in a device called a diode. A semiconductor is an electrical material that has properties in between those of an insulator and a conductor. At the junction, currents flow in one direction only; electrons move from the P-type to the N-type semiconductor, while holes move in the opposite direction. This is known as the rectifying action of a diode.
Specifically, in the EGP10BEHE3/54 diode, the PN junction is formed by a gallium-phosphide substrate and an aluminium-doped layer. When the forward bias on the junction is increased, the electron current begins to increase, and the forward voltage drop decreases, making it suitable for AC applications. On the other hand, in reverse bias, the electric field generated by the PN junction prevents the conductive electrons from passing through the junction, thus blocking any reverse current.
In summary, the EGP10BEHE3/54 is a single rectifier diode capable of providing excellent thermal performance in a variety of AC applications, including power rectification, reverse current protection, low-voltage DC motor control, and audio switching. It has the added advantage of a low forward voltage drop and a high surge current rating, making it a reliable and efficient choice for medium and high-power AC to DC conversion.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EGP10G | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10K | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
EGP10F | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10D | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10B | ON Semicondu... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C | ON Semicondu... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10AHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10BEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10BHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10CHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10DHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10FHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GEHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10GHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10A-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10F-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10A-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
EGP10B-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10C-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10D-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10F-E3/73 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
EGP10GE-E3/54 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10G-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10BE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
EGP10CE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
EGP10DE-E3/54 | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
EGP10D-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
EGP10G-E3/53 | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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