EGP10DE-E3/54

Series:	SUPERECTIFIER®
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	950mV @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	5µA @ 200V
Capacitance @ Vr, F:	22pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-204AL (DO-41)
Operating Temperature - Junction:	-65°C ~ 150°C
Base Part Number:	EGP10D

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Introduction

EGP10DE-E3/54 is a part of Diodes - Rectifiers - Single. Its type is General Purpose Rectifier, in which P-Channel Field Effect Transistor (FET) is the main element. An EGP10DE-E3/54 is a silicon controlled rectifier (SCR) specifically designed for applications where low voltage, high current and low cost are required. It is also used in applications such as motor drives, power supplies, invertors and battery chargers.

Application Field

The EGP10DE-E3/54 can be used as a bridge rectifier, a booster rectifier and a voltage doubler. It is also an ideal choice for AC/DC conversion and for DC/DC conversion applications. In motor drive applications, it is useful for motor start/stop control and speed control. In power supplies, it is suitable for raising AC source voltage, charging batteries or powering small devices.In inversion applications, it can be used to power AC motors. In battery chargers, it can be used to charge batteries of different sizes and capacities.

Working Principle

EGP10DE-E3/54 employs the principle of field effect to control the conduction of current. The G-S (Gate to Source) terminal of the FET is connected to a DC gate bias supply and the D (Drain) to the anode of the diode. When the appropriate gate bias is applied to G-S terminal, the FET is enabled and current will flow from its anode to its cathode. This will cause the anode voltage to drop to the same level as the cathode and allow a forward conduction of the diode. The current then flows through the diode and is limited only by the gate circuit. When the gate voltage is removed, the FET switch is turned off and the current stops flowing. The EGP10DE-E3/54 uses the same operation to control reverse conduction. As the anode voltage increases, the FET acts as an open switch and the diode blocks the current flow. Thus, the EGP10DE-E3/54 works as a bidirectional switch which is able to provide fast switching with low power losses.

Miscellaneous Points

Various other features of EGP10DE-E3/54 makes it even more attractive and suitable for variety of rectification and switching applications. Its small size, low power consumption and robust construction make it suitable for applications in remote, rugged or limited space areas.The EGP10DE-E3/54 is available with a wide range of operating voltages and currents, making it suitable for a variety of applications. It has a built-in protection circuitry with low surge and reverse power dissipation, allowing for a long life and efficient operation. It is also useful for motor start/stop control and speed control applications. It features a wide enable voltage range and offers a fast switching speed. Moreover, it is designed to provide low junction capacitance, making it suitable for both low voltage and high power applications.

Conclusion

In conclusion, EGP10DE-E3/54 has a wide application in fields such as motor drives, power supplies, inversions and battery chargers, due to its compact size, low power consumption, robust construction and built-in protection circuitry. It has a wide operating voltage and current range, low power dissipation and low surge characteristics, making it suitable for a variety of applications. The fast switching speed and low junction capacitance of the EGP10DE-E3/54 makes it a great choice for both low voltage and high power applications.

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