EGP10B-TP Allicdata Electronics

EGP10B-TP Discrete Semiconductor Products

Allicdata Part #:

EGP10B-TPTR-ND

Manufacturer Part#:

EGP10B-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 100V 1A DO41
More Detail: Diode Standard 100V 1A Through Hole DO-41
DataSheet: EGP10B-TP datasheetEGP10B-TP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: EGP10B
Description

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The EGP10B-TP is a single-phase silicon rectifier bridge designed for general purpose applications. It is widely used in commercial and industrial equipment for power supply and motor control systems.The EGP10B-TP is designed for maximum current ratings of 10A and maximum forward voltage ratings of 1.4V. It is rated for a maximum reverse voltage of 1000V and can withstand a maximum surge current of 200A. The typical turn-on time is 30ns and the typical reverse recovery time is 40ns. The device also has an operating temperature range of -25 to +130°C.The EGP10B-TP includes an integrated snubber circuit to control voltage transients and reduce EMI. The snubber circuit uses two Zener diodes connected in series which limit the voltage spikes across the diode bridge. The snubber circuit also contains two capacitors which provide dampening of the voltage spikes.The EGP10B-TP is a member of the EGP series family of rectifier bridges. It is available in 3 different package types; TO-220, D-182 and D-200. The TO-220 package is commonly used for high current applications where the D-182 and D-200 packages are used in more compact applications.The EGP10B-TP features an optimized Schottky diode and a low forward voltage drop. The semiconductor structure of the device ensures fast switching performance, low losses and minimal power dissipation. The integrated thermal protections and current limiters ensure protection against over-current and over-temperature conditions. The device is ESD-protected for immunity against electrostatic discharge.The EGP10B-TP offers a wide range of advantages including high-frequency operation and high reliability. The device combines fast switching performance and low losses, allowing for efficient and reliable power conversion. The wide operating temperature range allows it to operate reliably in harsh industrial environments. It also has a high surge current rating which gives it a high level of surge protection.The EGP10B-TP is an ideal choice for a wide range of applications including power supplies, motor control systems, UPS systems, solar inverters, and battery charging systems. Its fast switching performance and low losses make it an ideal device for high frequency applications. It is also a reliable device and offers a high level of protection from ESD and over-current conditions. Its wide operating temperature range and high surge current rating make it suitable for a variety of industrial applications.

The specific data is subject to PDF, and the above content is for reference

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