EMH10FHAT2R Discrete Semiconductor Products |
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Allicdata Part #: | EMH10FHAT2RTR-ND |
Manufacturer Part#: |
EMH10FHAT2R |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NPN+NPN DIGITAL TRANSISTOR (CORR |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMH10FHAT2R Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.03440 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | -- |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
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EMH10FHAT2R Application Field and Working Principle
The EMH10FHAT2R is an array of pre-biased, NPN bipolar transistors which is manufactured by ON Semiconductor. It is designed for use in a wide range of applications, from high-efficiency engine control for cars and trucks to use in telecom and power management applications. This article will look at the application fields and the working principle of the EMH10FHAT2R.
Application Field
The EMH10FHAT2R is mainly designed for use in applications that require a high degree of power density and low power dissipation. Due to its pre-biased nature, the EMH10FHAT2R can be used in even the most extreme environments. This makes it ideal for use in automotive applications, such as engine controls, where the greatest demand for power exists. Additionally, due to its high breakdown voltage and its ability to handle high temperatures, this component also has the potential to be used in telecom and power management applications.
Working Principle
The EMH10FHAT2R is a pre-biased array of NPN bipolar transistors, which has the ability to provide extremely high levels of efficiency and power density when compared to other types of transistors. The component is designed to operate with two separate transistors that are connected in series, with each transistor containing a collector and emitter base. The emitter is linked through a resistor to voltage and current sources, while the collector is connected to the circuit\'s load.
When the component is in operation, current will flow from the voltage source to the emitter, passing through both the resistor and the transistor. The current that flows from the collector will then be regulated by the current source, and the amount of current that passes through the component is controlled by the voltage source. This voltage source will also control the amount of current that circulates between the collector and the emitter. In this way, the EMH10FHAT2R is able to provide high levels of tuning, performance, and energy efficiency, making it an ideal choice for applications that require high levels of efficiency and power density.
Conclusion
The EMH10FHAT2R is an array of pre-biased, NPN bipolar transistors that is designed for a wide range of applications, from automotive engine control to telecom and power management. With its high power density and low power dissipation, the EMH10FHAT2R has the potential to improve the efficiency of almost any system. Its working principle is based on the flow of current between two transistors in series, with the collector and emitter being linked to voltage and current sources. By adjusting the voltage and current sources, it is possible to have the component provide high levels of power regulation and energy efficiency. As a result, the EMH10FHAT2R is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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