EMH15T2R

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The EMH15T2R bi-polar transistor array is an excellent device for amplifying, switching, or for other applications requiring current gain. This pre-biased array includes two transistors in the required configuration with all of the interconnects shorted, so it\'s a good choice for space conscious projects.

The EMH15T2R consists of two NPN transistors with a common emitter configuration, in which one of the transistors is pre-biased. This helps to reduce the number of components, and can reduce the overall power dissipation of the circuit, too. The biasing of the circuit is done by connecting the base of the first transistor to one side of the main DC voltage, and the collector of the second transistor to the other side of the DC voltage.

The two transistors are connected in an "inverted Darlington" configuration, with both collectors connected to each other. This configuration helps to increase the current gain and also increases the speed at which the circuit can operate. The advantages of the EMH15T2R over other transistors and configurations are:

• Increased current gain and speed
• Oil-tight package
• Low power dissipation
• Minimum number of components

The EMH15T2R is usually used as an amplifier, switching device in telecommunications and radio-frequency applications, or in power supplies. The device can be used to amplify voltages up to +15 volts DC and operate at frequencies up to 500 MHz. The current gain is also very high, with peak values of up to 1500 A/A.

To understand how the EMH15T2R works, first we need to know what a transistor is. A transistor is a semiconductor device which has both amplifying and switching properties. It is made up of two regions of semi-conducting material, where one region is called the base and the other region is the collector. The base and collector are separated by a thin layer of insulator. When a current is applied to the base, it activates the transistor, allowing current to flow from the collector to the base.

The EMH15T2R works with two transistors in an "inverted Darlington" configuration. When a signal is applied to the base, it activates the first transistor, and the current gain of this transistor is then transferred to the second transistor. This process allows the signal to be amplified, and the amplified signal can then be applied to a load. The current gain of the EMH15T2R is very high, and it can be used to create switches or amplifiers with very low power dissipation.

The EMH15T2R also has a high switching speed, which is a great advantage in applications that require a fast response time. This makes it a good choice for use in telecommunications and radio-frequency applications. It also has an oil-tight package, which helps to protect the device from humidity and other environmental factors. The device can also be used in power supplies, and its low power dissipation makes it an efficient choice for this application.

In summary, the EMH15T2R is an excellent choice for applications requiring current gain, speed, or low power dissipation. Its inverted Darlington configuration and pre-biased transistors help to reduce the number of components, and increase the speed and efficiency of the circuit. This makes it an ideal choice for telecommunications, radio-frequency applications, and power supplies.

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