EMH11T2R Discrete Semiconductor Products |
|
Allicdata Part #: | EMH11T2RTR-ND |
Manufacturer Part#: |
EMH11T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMH11T2R Datasheet/PDF |
Quantity: | 40000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
Base Part Number: | *MH11 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
EMH11T2R transistors are an array of specific transistors of the bipolar junction type family, which are pre-biased for enhanced operation. These devices are arguably the most efficient and reliable arrangement when it comes to powering certain circuits, such as RF and switching circuits. As their name would suggest, they are most notably used within the aerospace industry and have found much success more generally in the fields of high-speed communications and small signal processing.
The basic principle behind the operation of EMH11T2R transistors is fairly straightforward, and can be broken down into two basic components. First, the pre-biased arrangement of the transistors provides a key benefit; it allows a higher magnitude of electrical current to be safely delivered to the target circuits, while maintaining minimal current draw on the power supply. Second, the arrangement of the EMH11T2R transistors also enables them to operate with a higher degree of efficiency than would be possible with other types of transistors. This is because the transistors are arranged in a way which effectively reduces the amount of energy lost to unwanted resistance.
It is important to note that EMH11T2R transistors are not the same as typical transistors, and as such require a higher voltage rating for operation than would normally be available. This is due to the high voltage bias provided by the pre-biased arrangement of the transistors, which creates a higher effective output voltage. In spite of this additional power requirement, EMH11T2R transistors are still not generally considered to be high-power devices, meaning they do not require a heavily regulated power supply. This makes them an attractive choice for many applications, as they provide a more efficient power distribution than conventional transistors, while still being lightweight and compact.
In addition to providing a higher degree of efficiency, EMH11T2R transistors also have superior noise immunity when compared to other types of transistors. This is because the pre-biased arrangement of the transistors ensures that any external noise signals are intercepted and attenuated before they reach the target circuits. This feature has made EMH11T2R transistors the ideal choice for applications involving high-frequency signals and sensitive measurements. However, it is important to note that the noise immunity of these transistors is maximized when they are operated at higher bias levels, meaning that some additional power must be supplied to achieve optimal performance.
Overall, EMH11T2R transistors are an excellent choice for applications requiring an efficient and reliable power source. Their pre-biased arrangement provides increased noise immunity and higher voltage output compared to conventional transistors, making them ideal for high-frequency operation and the processing of sensitive signals. Moreover, because they do not require a heavily regulated power supply, they are lightweight and compact, making them suitable for a variety of applications. As a result, they have become one of the most sought-after transistors in the aerospace industry and more generally in the fields of high-speed communications and small signal processing.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EMH1405-P-TL-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 8.5A EMH8... |
EMH1307-TL-H | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 6.5A EMH8... |
EMH1405-TL-H | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 8.5A EMH8... |
EMH11FHAT2R | ROHM Semicon... | -- | 8000 | NPN+NPN DIGITAL TRANSISTO... |
EMH1FHAT2R | ROHM Semicon... | 0.04 $ | 8000 | NPN+NPN DIGITAL TRANSISTO... |
EMH10FHAT2R | ROHM Semicon... | 0.04 $ | 1000 | NPN+NPN DIGITAL TRANSISTO... |
EMH11T2R | ROHM Semicon... | -- | 40000 | TRANS 2NPN PREBIAS 0.15W ... |
EMH10T2R | ROHM Semicon... | -- | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
EMH1T2R | ROHM Semicon... | 0.07 $ | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
EMH15T2R | ROHM Semicon... | 0.05 $ | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
TRANS NPN PREBIAS/NPN 6TSSOPPre-Biased B...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...
TRANS RET SC-88Pre-Biased Bipolar Transi...