EMH1FHAT2R

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The EMH1FHAT2R is a hybrid pre-biased transistor array which is designed for use in a variety of applications. It is a dual pre-biased, ultra-small package, low-noise, highly reliable, and low-power transistor array.

This device is made up of two integrated chips – a die containing 2N3904 NPN transistors and a DTC144EJ N-channel JFET. The NPN transistors are connected in a parallel configuration to act as an emitter follower, and the JFET is connected between the base of the transistors and the emitter. Together, they provide a very low noise, low power, highly reliable and space-efficient solution.

The EMH1FHAT2R is designed to bring together the efficiency and reliability of a MOSFET with the speed, accuracy and power of a BJT transistor. This makes the EMH1FHAT2R ideal for use in many applications, including power conversion, signal control, and audio amplification. By using a pre-biased configuration, it can also be used to extend the life of batteries and reduce their power consumption.

The EMH1FHAT2R is designed to be used in circuits which require very high current or very high voltage. It can be used for bipolar linear, class-A and class-B audio amplifiers, current sense, amplifier driver or switching applications, such as motor control or voltage regulator circuits. Its pre-biased design helps provide good signal isolation, thermal protection and low distortion.

The working principle of the EMH1FHAT2R is based on the properties of the cascaded NPN-JFET configuration. When the base of the NPN transistor is driven by a small current, the JFET produces a large current that is pro-rata to the base current. This means that the current can be easily controlled without affecting the base-emitter voltage, allowing for efficient and precise operation.

The current gain of the device is determined by the ratio of the JFET’s source to gate current. The source current is the current flowing through the JFET from the drain to the source. When the gate voltage is adjusted, the source current increases in proportion to the gate current. This, in turn, increases the current gain of the device, resulting in more efficient and precise performance.

Another important feature of the EMH1FHAT2R is its low-noise operation. This is achieved by using a feed forward configuration, which helps reduce offset errors and reduces distortion. This helps to ensure that the device\'s performance remains within a narrow tolerance range and reduces the need for frequent calibration.

In summary, the EMH1FHAT2R is an ideal pre-biased transistor array for use in a variety of applications. Its low-noise, low-power and highly reliable design makes it a great choice for high power, high-voltage or current sense applications, and its pre-biased configuration helps to extend the life of batteries and reduce their power consumption.

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