EMH1307-TL-H Allicdata Electronics
Allicdata Part #:

EMH1307-TL-H-ND

Manufacturer Part#:

EMH1307-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 6.5A EMH8
More Detail: P-Channel 20V 6.5A (Ta) 1.5W (Ta) Surface Mount 8-...
DataSheet: EMH1307-TL-H datasheetEMH1307-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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EMH1307-TL-H is an enhancement mode, normally-off MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is used in the digital and analog signal processing in modern electronics. It is a low operating voltage, low gate threshold MOSFET designed to operate at up to 10A and 55V. The EMH1307-TL-H is designed to provide exceptional performance in a wide range of applications.

MOSFETs are unipolar devices, meaning they are comprised of two of the same type of conductors. In the case of the EMH1307-TL-H, this includes the source and drain electrodes made of N-type semiconductor material. The N-type material is a relatively new material, however, the first MOSFET was developed in the 1960s.

The channel of the EMH1307-TL-H is also N-type material, however, it is made of thicker layers than the source and drain. This creates a layer of insulation between the source and drain, ensuring that the current is only able to flow from source to drain, and not from drain to source. This phenomenon is known as enhancement mode, meaning that the device acts as an “off-state” when no voltage is applied to the gate terminal.

The EMH1307-TL-H also features a low operating voltage with a 2.2V gate threshold voltage. This makes the device suitable for use with low voltage and low power applications as the device is able to operate with a very small voltage difference. This reduced voltage requirement makes the EMH1307-TL-H attractive to consumer electronics devices, or any other device requiring a low power switch.

The EMH1307-TL-H is capable of operating at a maximum current of 10A and maximum voltage of 55V. It is also rated for an operating temperature range of -55ºC to +175ºC. This wide temperature range makes the device suitable for a wide range of harsh environments, such as automotive and agricultural applications.

The device itself is constructed from a robust lead free package, ensuring it has a high level of shock and vibration resistance. This makes the EMH1307-TL-H suitable for use in mobile and portable applications, where shock and vibration resistance is important.

The EMH1307-TL-H is a versatile MOSFET that is suitable for a wide range of digital and analog signal processing applications. Its low operating voltage and robust package make it suitable for automotive, agricultural, and consumer electronics. Its wide operating temperature range makes it suitable for harsh environments, while its low power switching capabilities make it attractive to low power, low voltage applications.

The specific data is subject to PDF, and the above content is for reference

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