Allicdata Part #: | EMH1T2RTR-ND |
Manufacturer Part#: |
EMH1T2R |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMH1T2R Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06410 |
16000 +: | $ 0.05845 |
24000 +: | $ 0.05467 |
56000 +: | $ 0.05027 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | *MH1 |
Supplier Device Package: | EMT6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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An important device in modern electronic circuits is known as the EMH1T2R, because of its wide range of applications in different types of projects. The EMH1T2R is an array of pre-biased transistors, or bipolar junction transistors (BJTs) that consists of two transistors. Having two transistors in this array allows for a variety of different performance characteristics and makes it suitable for many different uses.
The EMH1T2R is primarily used to create a variety of different levels of current gain and linearity. In addition to this, the EMH1T2R can also be used to improve the linearity of amplifiers, to reduce noise, and to improve the power efficiency of systems that use it.
The basic working principle of the EMH1T2R is based on the concept of transistor biasing. Transistor biasing refers to the process of creating an electrical current across the base and collector of a transistor. This current can be used to control the current output from the transistor, allowing for a more precise control of the voltage and current that is being applied.
In the case of the EMH1T2R, two transistors are connected in series, with the base-emitter junction of one connected to the base of the other, and the collectors of both connected to the same point. When a voltage is applied to the base of one transistor, the voltage across the collector is increased, while the voltage across the base of the other is decreased. This creates an imbalance in the current flow between the two transistors, resulting in a practical gain of current that can be used to increase the overall performance of the circuit.
The same process can also be used to create a more linear output. This is done by simply changing the bias on the collector of each transistor. When a greater amount of bias is applied to one transistor, it causes the current gain to be reduced. As a result, the voltage output between the two transistors is more linear, resulting in better signal quality.
The EMH1T2R is an incredibly useful tool to have in any electronic circuit, due to its wide range of applications. It can be used to create a variety of current gains, for signal amplification and for creating a more linear output. In addition, it can also be used to reduce noise, improve power efficiency, and improve linearity.
The specific data is subject to PDF, and the above content is for reference
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