EPC8002 Discrete Semiconductor Products |
|
Allicdata Part #: | 917-1118-2-ND |
Manufacturer Part#: |
EPC8002 |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 65V 2.7A BUMPED DIE |
More Detail: | N-Channel 65V 2A (Ta) Surface Mount Die |
DataSheet: | EPC8002 Datasheet/PDF |
Quantity: | 45000 |
2500 +: | $ 0.98286 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | Die |
Supplier Device Package: | Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21pF @ 32.5V |
Vgs (Max): | +6V, -4V |
Series: | eGaN® |
Rds On (Max) @ Id, Vgs: | 530 mOhm @ 500mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 65V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EPC8002 is a single E-mode GaN or GaAs FET that offers some of the highest efficiency and power density available for a broad range of power management and consumer applications. That’s because this device, which is designed to operate at frequencies up to 17 GHz, offers significant advantages to high-density power supplies and applications that require switching frequencies above 10 GHz. To top it all off, the EPC8002 offers the highest junction temperature of any similar device.
Since its introduction, the EPC8002 has become the go-to device of choice for many types of power management, consumer and industrial applications. Its combination of high performance, low on-resistance and high switching frequency makes it a good fit for radio frequency (RF) designs, mobile power systems and solid-state lighting applications. Additionally, its innovative structure ensures low gate-drain charge and industry-low reverse leakage current.
To understand the EPC8002, it’s important to have a basic understanding of how the FET works. FETs, or Field-Effect Transistors, are a type of transistor that operates based on the flow of electrons through a channel between the source and drain. The channel is controlled by the gate, which acts as an electric field to direct the flow of electrons. By controlling the amount of current flowing through the channel, the FET can be used to switch between high and low current levels.
The EPC8002 is a type of FET known as an E-mode GaN or GaAs FET, which stands for electro-molecular field effect transistor. This type of FET utilizes a thin film of semiconductor material that consists of ionized molecules between the source and drain. The molecules form an electric field, which when passed through the thin film, creates voltage drops that control the flow of current. The thin film also serves to amplify the electric field and reduce the on-resistance of the device.
The EPC8002’s unique design allows it to operate at frequencies up to 17 GHz, making it ideal for applications that require high switching speeds. Additionally, its high efficiency and low on-resistance make it an ideal choice for power management applications. The device’s low reverse leakage current helps keep the total power supplied to a system low, while its rugged construction means it can operate in a wide temperature range.
The EPC8002 is an ideal choice for applications that require high performance, robust design and high switching frequencies. Its combination of features make it suited for a broad range of applications, including radio frequency (RF) designs, mobile power systems and solid-state lighting applications. It also offers a high junction temperature, making it a good fit for designs that require reliable operation in extreme temperatures.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EPC8004 | EPC | 1.86 $ | 5000 | TRANS GAN 40V 2.7A BUMPED... |
EPC8010 | EPC | -- | 12500 | TRANS GAN 100V 2.7A BUMPE... |
EPC8002 | EPC | 1.09 $ | 45000 | TRANS GAN 65V 2.7A BUMPED... |
EPC8009 | EPC | -- | 5000 | TRANS GAN 65V 2.7A BUMPED... |
EPC8QC100 | Intel FPGAs/... | -- | 1000 | IC CONFIG DEVICE 8MBIT 10... |
EPC8QI100 | Intel FPGAs/... | -- | 1000 | IC CONFIG DEVICE 8MBIT 10... |
EPC8QI100N | Intel FPGAs/... | 246.26 $ | 2 | IC CONFIG DEVICE 8MBIT 10... |
EPC8QC100N | Intel FPGAs/... | -- | 1000 | IC CONFIG DEVICE 8MBIT 10... |
EPC8QC100DM | Intel FPGAs/... | 0.0 $ | 1000 | IC CONFIG DEVICE |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...