EPC8004 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	Die
Supplier Device Package:	Die
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	52pF @ 20V
Vgs (Max):	+6V, -4V
Gate Charge (Qg) (Max) @ Vgs:	0.45nC @ 5V
Series:	eGaN®
Rds On (Max) @ Id, Vgs:	110 mOhm @ 500mA, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	2.7A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	GaNFET (Gallium Nitride)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction on EPC8004 Application Field and Working Principle

EPC8004 is a type of P-Channel Enhancement Mode Field Effect Transistor (FET). The key features of the part include: simple and cost-efficient design, excellent reliability and long operating lifetime, and wide operating temperature range from -40°C to 150°C. It is suitable for a wide range of applications such as power management, lighting control, motor control, and solar energy conversion.

EPC8004 Application Field

EPC8004 is a type of P-channel Enhancement Mode FET. It is an ideal choice for a wide range of power management and control applications. The key features of EPC8004 which make it suitable for the target applications include:

• Low On-state Resistance. EPC8004 has a low on-state resistance which enables it to deliver low power losses, better efficiency, and higher performance.
• High Switching Speeds. EPC8004’s fast switching speeds enable it to energize and de-energize loads quickly, making it suitable for applications that require rapid response time.
• Long Operating lifetimes. EPC8004’s long operating lifetime ensures the device will last longer and will not require frequent replacement.
• Low Gate Capacitance. EPC8004’s low gate capacitance ensures the device will provide excellent switching performance and no energy loss due to switching.
• Wide Operating Temperature Range. EPC8004 has a wide operating temperature range from -40°C to 150°C, making it suitable for a wide range of applications.

EPC8004’s combination of low on-state resistance, high switching speeds, long operating lifetime, low gate capacitance, and wide operating temperature range make it suitable for a wide range of power management and control applications such as motor control, lighting control, power management, and solar energy conversion.

EPC8004 Working Principle

EPC8004 is a P-channel enhancement Mode FET. The device utilizes a P-type channel for conduction, instead of an N-type channel as with N-channel enhancement-mode FETs. The principles of operation for EPC8004 are as follows:

• When a positive voltage is applied to the Gate of EPC8004, the voltage causes a depletion region to form between the Source and Drain of the FET. This depletion region acts like an insulating barrier between the source and drain, preventing current from passing through.
• When a negative voltage is applied to the Gate of EPC8004, the voltage causes the depletion region to dissipate and the FET to be switched “on.” This allows current to flow between the Source and Drain.
• When the voltage applied to the Gate is returned to zero, the depletion region forms again and the FET is switched “off.” This stops the current from flowing between the Source and Drain.

The working principle of EPC8004 makes it suitable for applications that require rapid switching and low power loss.

Conclusion

EPC8004 is a type of P-channel Enhancement Mode FET. The device features low on-state resistance, high switching speeds, long operating lifetime, low gate capacitance, and wide operating temperature range, making it suitable for a wide range of power management and control applications. The working principle of EPC8004 makes the device suitable for applications that require rapid switching and low power loss.

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