EPC8009 Discrete Semiconductor Products |
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Allicdata Part #: | 917-1078-2-ND |
Manufacturer Part#: |
EPC8009 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 65V 2.7A BUMPED DIE |
More Detail: | N-Channel 65V 2.7A (Ta) Surface Mount Die |
DataSheet: | EPC8009 Datasheet/PDF |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | Die |
Supplier Device Package: | Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 52pF @ 32.5V |
Vgs (Max): | +6V, -4V |
Gate Charge (Qg) (Max) @ Vgs: | 0.45nC @ 5V |
Series: | eGaN® |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 500mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drain to Source Voltage (Vdss): | 65V |
Technology: | GaNFET (Gallium Nitride) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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EPC8009 is a gallium nitride (GaN) enhancement mode power transistor intended for RF and switching applications. It is an ideal device for providing high-frequency power amplification in both pulsed and continuous operations. The device features high output power, wide bandwidth, and low thermal resistance, making it suitable for military, industrial and commercial applications.
The EPC8009 has an industry-standard plastic package (called QFN) and requires little to no external circuitry for operation, making it a versatile and easy to use device. Its high performance enables it to be used for a wide range of applications, including power conversion, high power amplifiers, switching, energy management, and consumer applications.
Working Principle of EPC8009:
EPC8009 is a high performance, enhancement mode GaN transistor. The enhancement mode is achieved by being biased in the active state so that current flows through the device when a voltage is applied across the drain-source. This enables the device to be used as either a switch or an amplifier, depending on the application. For example, in a switching application, the device can be used to amplify the voltage at the drain, allowing more power to flow through the device. In a high power amplifier, the device can be used to provide gains in the range of 20 dB and beyond.
In terms of power efficiency, the device exhibits excellent efficiency and low thermal resistance. This is due to its advanced GaN technology, which allows for rapid switching and low power losses. In addition, the device has a wide operating temperature range of -55 to +150 degrees Celsius.
In terms of application field, the EPC8009 is ideal for use in high power applications such as RF and switching amplifiers and power converters. Its wide bandwidth and high power output make it a great choice for consumer and industrial applications. Furthermore, the device can be used in automotive, industrial, and defense applications due to its excellent operating temperature range.
The EPC8009 is an ideal device for providing power amplification in high power applications. Its advanced GaN technology and wide operating temperature range make it an excellent choice for consumer and industrial applications. In addition, the device features low power losses and high power efficiency, making it an ideal choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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