Allicdata Part #: | ES1JAFTR-ND |
Manufacturer Part#: |
ES1JAF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 600V 1A DO214AD |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AD (SMA... |
DataSheet: | ES1JAF Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 34ns |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AD, SMAF |
Supplier Device Package: | DO-214AD (SMAF) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES1JAF Application Field and Working Principle
ES1JAF is a type of single rectifying diode used for a wide range of applications, particularly in rectifying electrical signals. It has been designed for the purpose of operating in the voltage range of 5V to 400V and current range of 0.5A to 4A. The ES1JAF diode has been widely applied in different places such as consumer electronics, computer peripherals and automobile industries. The diode can also be used in circuit protection devices as well as power supplies.
A single rectifying diode has one simple function, i.e. to convert alternating current (AC) into direct current (DC). The basic working principle of an ES1JAF diode is to allow electrical current to flow in one direction only. This is because the diode is made up of two paralleled layers in which the forward direction is applied to the anode and the reverse direction to the cathode. When the direct current (DC) voltage source is applied to the anode, the ES1JAF diode will be in forward bias and a current flows through the diode in the same direction as that of the applied voltage.
On the other hand, when the voltage source is reversed, the diode will be in reverse bias and the diode will totally block the flow of current in the reverse direction. This blocking function of the diode is known as the diode\'s reverse breakdown voltage, which is a critical voltage level above which the diode will be heavily damaged if it remains in that state for too long. This level is indicated by ES1JAF in its specification and should be kept in mind when applying the device.
The ES1JAF is also known for its high reliability, with high current blocking capability and low forward voltage as well as reverse leakage current. It has also been designed with a high reliability plastic package (HRS-DPAK) that conforms to international standards such as ROHS. This feature has made ES1JAF an ideal choice for use in automotive applications and other high-temperature sensitive environmental requirements. It provides excellent reliability, making it an ideal choice for a wide range of electrical, electronic and automotive applications.
In addition, the design of the ES1JAF diode has also been optimized to reduce power loss and provides a high output power factor. By using this device, it is possible to reduce power loss in the power supply systems and increase the efficiency of the system. This leads to more cost savings and better overall performance.
The main advantage of using the ES1JAF diode is its ability to provide efficient rectification of AC input signals and also to provide very fast switching times. The device can handle input signals of varying frequencies and can also be used in pulse-width modulation (PWM) applications, providing the best performance for oscillating signals or for applications that require a high-speed response time. This type of rectifier also offers wide range protection from reverse polarity and from short-circuit conditions.
In conclusion, the ES1JAF diode offers a wide range of advantages for applications in the electronics and automotive industry. Its high reliability and efficiency have made it a popular choice for a wide range of applications. Its wide voltage and current range also ensures that it is suitable for a variety of applications. This type of diode is also very cost effective and efficient, making it an ideal choice for any kind of project that requires rectification of AC signals.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ES1JL R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLW RVG | Taiwan Semic... | 0.06 $ | 66000 | DIODE GEN PURP 600V 1A SO... |
ES1JL RVG | Taiwan Semic... | 0.06 $ | 12000 | DIODE GEN PURP 600V 1A SU... |
ES1JTR | SMC Diode So... | 0.04 $ | 90000 | DIODE GEN PURP 600V 1A SM... |
ES1J-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JAF | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JLWHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SO... |
ES1J R3G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1J-LTP | Micro Commer... | -- | 125000 | DIODE GEN PURP 600V 1A DO... |
ES1J | ON Semicondu... | -- | 22500 | DIODE GEN PURP 600V 1A SM... |
ES1JF R2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
ES1J M2G | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RFG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JFL | ON Semicondu... | 0.08 $ | 6000 | DIODE GEN PURP 600V 1A SO... |
ES1JHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JL M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JP1-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE STD 1A SMDDiode |
ES1JWF-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE STD 1A SMDDiode |
ES1JF R3G | Taiwan Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
ES1JFL RVG | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1A SO... |
ES1JLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
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