Allicdata Part #: | ES1JLHRQG-ND |
Manufacturer Part#: |
ES1JLHRQG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A SUB SMA |
More Detail: | Diode Standard 600V 1A Surface Mount Sub SMA |
DataSheet: | ES1JLHRQG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.05034 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The field of ES1JLHRQG application is the use of semiconductor devices in industry and electronics. The semiconductor device has a Positive Voltage Threshold (PVT) and a Negative Voltage Threshold (NVT). These are the two thresholds when a current flows in the device. During a period of time when the voltage is less than the PVT, the device is said to be in a reverse-bias mode and no current flows in the device. When the voltage reaches the NVT, the device is said to be in a forward-bias mode and current passes through the device.
ES1JLHRQG is a type of diode, a type of rectifier that is made up of a single component, which is a single semiconductor junction. It is a type of current regulator, and it is used to supply single-phase AC power to a DC circuit. The ES1JLHRQG operates in two threshold voltages; one that is reverse-biased when the voltage is below the PVT, and one that is forward biased when the voltage rises beyond the NVT. During a forward bias, the current that passes through the diode is limited by the PVT. When the voltage reaches the NVT, the device switches to the forward bias condition and the current passes through the device until the voltage reaches the PVT.
The primary purpose of the ES1JLHRQG is to convert AC power to DC power. It is also used to provide control and protection for battery chargers, AC to DC converters, and other power supply systems. It is also used to provide electrical protection in sensitive electronic circuits. The ES1JLHRQG has a low forward voltage drop, which means that only a small voltage change is required to cause a large change in the current. This feature makes it very useful for applications where precise current regulation is desired.
The Working principle of an ES1JLHRQG is that when a voltage greater than its NVT is applied across it, a large current will flow through it. If the voltage is then taken away, the current will continue to flow in the same direction until the voltage drops below the PVT. This means that the ES1JLHRQG can be used to regulate the current in a DC circuit. It is often used in applications where the current needs to be precisely controlled.
The ES1JLHRQG is a very versatile device that can be used in many different applications. It is a low-cost device, and its ability to precisely control current makes it ideal for use in various applications. It is used in industrial systems to provide precise control of electrical current, and in many other applications where precise current regulation is required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1JL R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLW RVG | Taiwan Semic... | 0.06 $ | 66000 | DIODE GEN PURP 600V 1A SO... |
ES1JL RVG | Taiwan Semic... | 0.06 $ | 12000 | DIODE GEN PURP 600V 1A SU... |
ES1JTR | SMC Diode So... | 0.04 $ | 90000 | DIODE GEN PURP 600V 1A SM... |
ES1J-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JAF | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JLWHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SO... |
ES1J R3G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1J-LTP | Micro Commer... | -- | 125000 | DIODE GEN PURP 600V 1A DO... |
ES1J | ON Semicondu... | -- | 22500 | DIODE GEN PURP 600V 1A SM... |
ES1JF R2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
ES1J M2G | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RFG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JL RUG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JFL | ON Semicondu... | 0.08 $ | 6000 | DIODE GEN PURP 600V 1A SO... |
ES1JHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
ES1JL M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
ES1JP1-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE STD 1A SMDDiode |
ES1JWF-7 | Diodes Incor... | 0.0 $ | 1000 | DIODE STD 1A SMDDiode |
ES1JF R3G | Taiwan Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
ES1JFL RVG | Taiwan Semic... | -- | 1000 | DIODE GEN PURP 600V 1A SO... |
ES1JLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SU... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...