Allicdata Part #: | ES1JLRHG-ND |
Manufacturer Part#: |
ES1JL RHG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A SUB SMA |
More Detail: | Diode Standard 600V 1A Surface Mount Sub SMA |
DataSheet: | ES1JL RHG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.04657 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 8pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES1JL RHG Diodes are single rectifiers developed for the purpose of application in the fields of computer and consumer electronics. This diode is a compact and cost-effective diode which is suitable for use in various instrumentation, telecommunications, and electrical equipment.
ES1JL RHG diodes are commonly used in the application fields of test equipment, temperature instruments, power control, automotive electronics, UPS systems, PCs and peripherals, industrial control, home appliances, and surge protection systems. They have a wide operating temperature range of -40°C to +125°C and feature excellent stability performance in both low and high temperature conditions.
The working principle of ES1JL RHG diodes is based on rectification, which is the process of converting alternating current (AC) to direct current (DC) or vice versa. The diode is made up of two semiconductor materials, one with a high P-type (Positive type) doping concentration and the other with a high N-type (Negative type) doping concentration.
When AC is applied to the diode, current passes only when a positive half-cycle is presented. This allows the diode to act as a rectifier and convert AC to DC. The diode also acts as a reverse-biased diode; it blocks the current when a negative half-cycle is presented.
A current–voltage (IV) characteristic curve is used to assess the behavior of an ES1JL RHG diode when different levels of current and voltage are applied. The curve is divided into three parts: the linear, non-linear, and reverse bias regions.
In the linear region, the diode’s current increases as voltage increases in a direct proportional fashion. This region is used to determine the diode’s forward voltage drop. The non-linear region is where the diode starts to become saturated and current becomes almost constant.
Finally, the reverse bias region represents the range at which the diode is reverse-biased, or off. This region is used to determine the diode’s reverse breakdown voltage.
ES1JL RHG diodes are extremely useful for many applications, as they are designed to provide robust protection against voltage and current spikes, as well as providing excellent efficiency and fast recovery time. In addition, this diode is extremely reliable, as it features a long-term reliability with a temperature coefficient of 0.0058.
The specific data is subject to PDF, and the above content is for reference
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