Allicdata Part #: | ES3D-FDITR-ND |
Manufacturer Part#: |
ES3D-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 200V 3A SMC |
More Detail: | Diode Standard 200V 3A Surface Mount SMC |
DataSheet: | ES3D-13-F Datasheet/PDF |
Quantity: | 18000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES3D |
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ES3D-13-F is a diode which operates in a rectifying mode, with a single-phase bridge circuit providing a rectified output which is suitable for applications requiring a high-direct current or a low-frequency power supply. The ES3D-13-F is unique in that it is one of the few single-phase diode bridges available with a low reverse leakage current. Its lowon characteristic makes it especially suited for applications such as: switching power supply, general low-frequency power supplies, and battery-operated circuits, etc.
The reverse recovery time (t_rr) of the ES3D-13-F is relatively short and is typically specified in the range of 1.0-1.5 nanoseconds. This combined with its low reverse leakage current makes it a good choice for high-current applications. The diode is specifically designed to provide excellent forward voltage and forward current capability, with a low forward voltage drop and low reverse leakage current ensures low waveform distortion and good efficiency.
The typical forward voltage of the ES3D-13-F is specified around 1.2V, and its forward current capability is typically up to 7.5A. The device is also capable of handling reverse voltages up to 600V, making it suitable for use in a wide range of applications.
The ES3D-13-F operates in a bridge configuration, where two diodes are connected in series, with a third diode connected in a parallel configuration, across the two diodes in series. This configuration is often referred to as a full-bridge configuration. This configuration allows the circuit to provide a rectified output which is suitable for applications requiring a high-direct current, or a low-frequency power supply.
The ES3D-13-F is an ideal solution for applications where a low on-state voltage drop and a high current capability is required. Additionally, its low reverse leakage current ensures that it can withstand large reverse voltage without significant losses. This makes it an ideal solution for applications such as switching power supplies, general low-frequency power supplies, and battery-operated circuits, etc.
The ES3D-13-F is commonly used in between the power supply input and the output load, to provide a rectified signal which is suitable for high-current applications. The full-bridge configuration also provides the advantage of being able to split the input signal into two separate outputs, thus allowing for the use of a single device to provide a symmetrical output signal, or to provide an unbalanced output signal in applications such as a half-bridge circuit. The device is also very simple to integrate into existing circuits as it requires minimal additional components.
Furthermore, the device is also perfectly suited for use as a rectifier in circuits where AC power supplies are required, as it is able to provide low forward voltage and reverse leakage current, thus allowing the use of lighter gauge wiring, and reducing the power dissipation of the circuit. The device is also extremely reliable, making it an ideal choice for critical applications, such as those involving medical equipment and aerospace applications.
In conclusion, the ES3D-13-F is an ideal solution for a wide range of applications due to its low on-state voltage drop and high current capability, combined with a low reverse leakage current. Its full-bridge configuration makes it a very versatile device and makes it perfect for use in AC power supply circuits, and other critical applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3D-13-F | Diodes Incor... | -- | 18000 | DIODE GEN PURP 200V 3A SM... |
ES3D R7G | Taiwan Semic... | 0.09 $ | 4250 | DIODE GEN PURP 200V 3A DO... |
ES3D V7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D | ON Semicondu... | -- | 3000 | DIODE GEN PURP 200V 3A SM... |
ES3DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A CF... |
ES3DBHR5G | Taiwan Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB R5G | Taiwan Semic... | 0.15 $ | 1700 | DIODE GEN PURP 200V 3A DO... |
ES3DB-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 200V 3A SM... |
ES3D-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3J_A/I | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/I | Vishay Semic... | -- | 3500 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB M4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DBHM4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3D/7T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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