Allicdata Part #: | ES3DFSTR-ND |
Manufacturer Part#: |
ES3D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 200V 3A SMC |
More Detail: | Diode Standard 200V 3A Surface Mount SMC (DO-214AB... |
DataSheet: | ES3D Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC (DO-214AB) |
Operating Temperature - Junction: | -50°C ~ 150°C |
Base Part Number: | ES3D |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
ES3D, or “End Surface Single Diode” is a device that has revolutionized the way in which many electrical and electronics systems are designed. It is a rectifier that offers a unique combination of voltage, current, power efficiency and reliability, all in a single package. This has enabled many engineers and designers to achieve their goals with far fewer components and greater ease of use, making their designs cheaper, more reliable and more energy efficient. The working principle of ES3D is quite simple, yet highly effective.The core of the ES3D rectifier consists of two dissimilar materials, typically a semiconductor material such as silicon or germanium and an insulator, in a thin film. The two materials are connected to opposite electrodes, one positive and one negative, and this is called the junction. When an electric potential is applied across the junction, it causes a flow of charge carriers—electrons or holes—across the junction, or rectification. The ES3D rectifier offers several advantages over other diode rectifiers. Firstly, it offers very good performance, as it has an extremely high current density, meaning that it can be used in applications where power demand is very high. It also operates at very low voltages, making it suitable for use in low-power applications. Additionally, the ES3D rectifier offers a very low forward voltage drop, resulting in improved efficiency and reduced power wastage when compared to traditional rectifiers. The ES3D rectifier is used in many different applications, such as power supplies, motor drivers, radio and telecoms equipment, general lighting, and solar energy systems. It is particularly useful in power supplies, where its low voltage drop helps to reduce power loss and increase efficiency. Additionally, its high current density makes it well-suited to applications that require large amounts of current, such as motor drivers and radio and telecoms devices. The ES3D rectifier also offers several advantages over other single-diode rectifiers. Firstly, its junction structure allows it to easily be “tuned” to behave in different ways. For example, by varying the length of the p-n junction, the reverse current can be adjusted to fit the specific application. Additionally, the material used for the junction can be selected to optimize the reverse leakage current. Furthermore, the ES3D rectifier offers several components which can be used to increase its performance. One of these components is the reverse polarity protection diode, which prevents the reverse leakage current from flowing when the electric potential across the rectifier is higher than the polarity of the diode. This is an important safety feature, as it prevents damage to the electric components in case of a voltage surge.Finally, the ES3D rectifier is highly reliable and has a long operational life expectancy. Its junction structure is immune to thermal stress, allowing it to operate in high-temperature environments with minimal degradation. Additionally, its low reverse leakage current significantly reduces power loss and increases efficiency. In summary, the ES3D rectifier is a revolutionary device that has revolutionized the way many appliances, machines and devices are designed. It offers superior performance, impressive power efficiency and reliability, all in a single package. Its junction structure enables it to be tuned for specific applications, while its reverse polarity protection diode ensures safety. Finally, its low reverse leakage current significantly reduces power loss and increases efficiency.Conclusion
The ES3D rectifier has enabled many engineers and designers to achieve their goals with far fewer components and greater ease of use, making their designs cheaper, more reliable and more energy efficient. It offers superior performance, impressive power efficiency and reliability, all in a single package. Its junction structure enables it to be tuned for specific applications, while its reverse polarity protection diode ensures safety. Finally, its low reverse leakage current significantly reduces power loss and increases efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ES3D-13-F | Diodes Incor... | -- | 18000 | DIODE GEN PURP 200V 3A SM... |
ES3D R7G | Taiwan Semic... | 0.09 $ | 4250 | DIODE GEN PURP 200V 3A DO... |
ES3D V7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D | ON Semicondu... | -- | 3000 | DIODE GEN PURP 200V 3A SM... |
ES3DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A CF... |
ES3DBHR5G | Taiwan Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB R5G | Taiwan Semic... | 0.15 $ | 1700 | DIODE GEN PURP 200V 3A DO... |
ES3DB-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 200V 3A SM... |
ES3D-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3J_A/I | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/I | Vishay Semic... | -- | 3500 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB M4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DBHM4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3D/7T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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