Allicdata Part #: | ES3DBDITR-ND |
Manufacturer Part#: |
ES3DB-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 200V 3A SMB |
More Detail: | Diode Standard 200V 3A Surface Mount SMB |
DataSheet: | ES3DB-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES3D |
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Diodes are electrical components that are used to control the flow of electric current. A rectifier is a type of diode that is specifically designed to convert alternating current into direct current. The ES3DB-13 single rectifier is a high-performance, low-cost rectifier that is widely used in a variety of applications in a variety of industries.
The ES3DB-13 has an operating voltage of 13V and a capacitance rating of 50mA. It is constructed from a high-quality material that is resistant to heat and other environmental elements. In addition, it has superior surge protection capabilities and is designed to provide linear current control for a wide range of applications.
The working principle of the ES3DB-13 is very simple. It consists of two semiconductor layers made of n-type and p-type materials that are inverted and connected together. When alternating current passes through the diode, the current is rectified and converted into direct current. This is done by the n-type layer allowing current to pass in one direction only and the p-type layer allowing current to pass in the opposite direction.
The ES3DB-13 diode has a wide range of applications in the automotive, industrial, commercial, and consumer sectors. In the automotive sector, it can be used in applications such as headlamps, battery charging, automotive relays, and starter circuits. In industrial applications, it can be used for the control of motors, solenoids, compressors, and pumps. In the commercial and consumer sectors, it can be used for applications such as power supplies, converters, LCD and LED displays, and audio/video devices.
The ES3DB-13 diode also has a number of features that make it an ideal choice for such applications. It operates at a wide temperature range of -55°C to +125°C, which makes it suitable for a variety of environments. It also boasts a low forward voltage drop of 1.1V and a high reverse leakage current of 50mA, making it an ideal solution for high efficiency DC/DC Converters. Furthermore, it has an impressive dielectric strength of 200kV/μs, which makes it highly reliable in operation.
In conclusion, the ES3DB-13 is an excellent single rectifier that offers high performance at a low cost. It is a reliable and efficient solution for a wide range of applications in the automotive, industrial, commercial, and consumer sectors. With its high surge protection capabilities, linear current control, low forward voltage drop, high reverse leakage current and dielectric strength, it is a great choice for any application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3D-13-F | Diodes Incor... | -- | 18000 | DIODE GEN PURP 200V 3A SM... |
ES3D R7G | Taiwan Semic... | 0.09 $ | 4250 | DIODE GEN PURP 200V 3A DO... |
ES3D V7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D | ON Semicondu... | -- | 3000 | DIODE GEN PURP 200V 3A SM... |
ES3DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A CF... |
ES3DBHR5G | Taiwan Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB R5G | Taiwan Semic... | 0.15 $ | 1700 | DIODE GEN PURP 200V 3A DO... |
ES3DB-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 200V 3A SM... |
ES3D-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3J_A/I | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/I | Vishay Semic... | -- | 3500 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB M4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DBHM4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3D/7T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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