Allicdata Part #: | ES3D-M3/9AT-ND |
Manufacturer Part#: |
ES3D-M3/9AT |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 3A DO214AB |
More Detail: | Diode Standard 200V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | ES3D-M3/9AT Datasheet/PDF |
Quantity: | 1000 |
7000 +: | $ 0.12210 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES3D-M3/9AT, belonging to the category of Diodes - Rectifiers - Single, is a package of two diodes that are designed to protect various equipment against destruction due to overvoltage transients. This diode pair is designed to accept voltages of up to 9A and 800V peak, and to provide superior surge handling and lower capacitance than other types of available packages.
This Rectifier package provides very high-speed switching frequencies and is suitable for a wide range of applications: from low current to ultra-high current and from low voltage to ultra-high voltage levels. It can also be used in power supplies, DC-to-DC converters, AC-DC converters, motor control circuits, UPS systems, and more.
The diode package offers superior mounting options including plastic, ceramic, and metal versions. The plastic models are water-resistant and suitable for applications with high humidity. Ceramic and metal packages offer better mechanical performance, vibration resistance, and lower thermal impedance.
The nickel-plated leadframe contributes to excellent thermal performance, good circuit integration and design flexibility. The insulation layer isolates the two rectifiers and reduces the risk of short circuits. The two diodes are separated by a common connection, which ensures that they can be connected in series without connecting every component separately. Furthermore, this protects the circuit against transient overvoltages, while numerous safety features ensure that the device can be operated safely and reliably.
The working principle of ES3D-M3/9AT is quite simple. When the anode has a higher potential than the cathode, the diode conducts current through the N-type layer and the diode is said to have forward bias. This allows a current to flow from the anode to the cathode, but blocks any current from flowing from the cathode to the anode. The direction of current flow is from a higher potential to a lower potential. When the anode has a lower potential than the cathode, the diode does not conduct and is said to have reverse bias.
ES3D-M3/9AT is a versatile, high-performance rectifier partnership that can be used in a range of high-current and high-voltage applications. It is well-suited for power supply and signal switching designs where fast switching speed, reliability and superior surge handling are required. The device has excellent thermal properties and can be installed in plastic, ceramic and metal packages. The two diodes are separated by a common connection which provides high isolation and protection against transient overvoltages.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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ES3D R7G | Taiwan Semic... | 0.09 $ | 4250 | DIODE GEN PURP 200V 3A DO... |
ES3D V7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D | ON Semicondu... | -- | 3000 | DIODE GEN PURP 200V 3A SM... |
ES3DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A CF... |
ES3DBHR5G | Taiwan Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB R5G | Taiwan Semic... | 0.15 $ | 1700 | DIODE GEN PURP 200V 3A DO... |
ES3DB-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 200V 3A SM... |
ES3D-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3J_A/I | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/I | Vishay Semic... | -- | 3500 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB M4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DBHM4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3D/7T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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