Allicdata Part #: | ES3DB-FDITR-ND |
Manufacturer Part#: |
ES3DB-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 200V 3A SMB |
More Detail: | Diode Standard 200V 3A Surface Mount SMB |
DataSheet: | ES3DB-13-F Datasheet/PDF |
Quantity: | 90000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES3D |
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The ES3DB-13-F is a rectifier diode especially well-suited for applications in automotive and industrial sectors. It is used for switching high currents and overvoltage protection. Low junction capacitances and high oscillation frequencies makes it an efficient device for powering vehicle and industrial electronics.
ES3DB-13-F features a hermetically sealed TO-202 encapsulated package, making it completely waterproof and dustproof. The package also houses a heat sink that disperses heat generated during operation. This prevents overheating and helps it to operate even at high temperature levels. When used in harsh environments, the device can operate consistently with minimal maintenance.
The ES3DB-13-F has an average forward current rating of 400mA. It can also withstand up to 400V pulse reverse voltaage. It has an average junction temperature of 150°C and an average rectified forward current of 150mA. The device can also withstand transient voltages up to 1500V. It is available in both through-hole and surface mount packages.
The working principle of the ES3DB-13-F is based on the PN junction diode. This diode consists of two types of semiconductor material, p-type and n-type, joined together. When a positive voltage is applied to the diode, it allows current to flow from the positive rail, to the p-type material and out of the n-type material. Conversely, when a negative voltage is applied, the diode does not allow current to flow, blocking the current and preventing any further flow.
In the case of the ES3DB-13-F, the two halves are strongly connected together, making it very stable and reliable. The device also has a fast recovery time and is able to switch between voltage levels at speeds of up to 200V/uS. This makes it ideal for applications that require high speed and accuracy. In addition, the device has a maximum reverse leakage current rating of 5μA, which ensures that the power rail does not suffer from excess current.
The ES3DB-13-F can be used for a wide range of applications, including power switching, surge protection, motor control, and overvoltage protection. It can also be used to control the voltage at certain loads and is ideal for use in harsh environments. The device is an efficient and reliable option for both industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3D-13-F | Diodes Incor... | -- | 18000 | DIODE GEN PURP 200V 3A SM... |
ES3D R7G | Taiwan Semic... | 0.09 $ | 4250 | DIODE GEN PURP 200V 3A DO... |
ES3D V7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D | ON Semicondu... | -- | 3000 | DIODE GEN PURP 200V 3A SM... |
ES3DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A CF... |
ES3DBHR5G | Taiwan Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB R5G | Taiwan Semic... | 0.15 $ | 1700 | DIODE GEN PURP 200V 3A DO... |
ES3DB-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 200V 3A SM... |
ES3D-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3J_A/I | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/I | Vishay Semic... | -- | 3500 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB M4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DBHM4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3D/7T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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