Allicdata Part #: | ES3DBHR5GTR-ND |
Manufacturer Part#: |
ES3DBHR5G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 3A DO214AA |
More Detail: | Diode Standard 200V 3A Surface Mount DO-214AA (SMB... |
DataSheet: | ES3DBHR5G Datasheet/PDF |
Quantity: | 1000 |
850 +: | $ 0.13788 |
1700 +: | $ 0.12336 |
2550 +: | $ 0.11248 |
5950 +: | $ 0.10522 |
21250 +: | $ 0.09797 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 100µA @ 200V |
Capacitance @ Vr, F: | 46pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES3DBHR5G diodes are part of a range of rectifiers designed for use in power supply applications. They are commonly used for rectification, rectification of high voltage, and power line conditioning. The diode has a wide operating temperature range, and is available in both through-hole and surface mount packages. The ES3DBHR5G diode provides very low forward voltage drop and high breakdown voltage in a small form factor. Its low profile and low leakage current makes it well suited for a range of applications including high frequency switching, signal conditioning, and EMI suppression.
The ES3DBHR5G diode is constructed from two separate layers; a substrate layer, and a top implant layer. The top implant layer, also known as the MC layer, is a thin aluminium film deposited onto the substrate to form a highly conducting region. The MC layer is then further processed with high-energy radiation, giving the layer a high degree of conductivity. The substrate consists of the doped silicon, which forms the junction layer, and is essential for the diode’s rectification of current.
The working principle of the ES3DBHR5G diode relies on the PN junction formed between the MC layer and the substrate. When a forward bias is applied to the diode, current can flow from the N-type area (the MC layer) to the P-type area (the substrate). This current flow allows the diode to act as a rectifier, converting alternating current (AC) to direct current (DC). The PN junction also acts as a barrier to the current, allowing current to flow in only one direction. This process is known as rectification, and it enables the diode to be used in a range of applications. In power supply designs, the diode is used as part of a bridge rectifier circuit to convert AC power to DC power.
In addition to its rectifying properties, the ES3DBHR5G diode also offers high breakdown voltage and low forward voltage drop. This is achieved due to the high-energy radiation used to form the MC layer, as well as its low profile, as a result of its surface mount design. This combination of features allows for the diode to be used in a variety of high-voltage applications, such as EMI suppression or signal conditioning. The diode is also ideal for power line conditioning, as the diode’s low forward voltage drop prevents the line from being overloaded, while the high breakdown voltage ensures that it can handle large amounts of current.
The ES3DBHR5G diode is thus a versatile component, capable of a variety of applications, from rectification to power line conditioning and EMI suppression. Its wide temperature range and low profile also make it well suited for a range of applications, while its high breakdown voltage and low forward voltage drop provide an added layer of protection in high-voltage applications. As such, the ES3DBHR5G diode is an ideal choice for a range of power supply designs.
The specific data is subject to PDF, and the above content is for reference
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ES3DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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