ES3DHE3_A/I Allicdata Electronics
Allicdata Part #:

ES3DHE3_A/IGITR-ND

Manufacturer Part#:

ES3DHE3_A/I

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 3A DO214AB
More Detail: Diode Standard 200V 3A Surface Mount DO-214AB (SMC...
DataSheet: ES3DHE3_A/I datasheetES3DHE3_A/I Datasheet/PDF
Quantity: 3500
Stock 3500Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: ES3D
Description

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ES3DHE3_A/I Overview

ES3DHE3_A/I is a single rectifying diode, which belongs to a broad category of components that consists of switches and controllers that use semiconductor-based diodes. ES3DHE3_A/I is designed to provide a low voltage drop and high surge rating, making it a suitable choice for applications that require efficient power conversion.

ES3DHE3_A/I Application Field

Diodes, including ES3DHE3_A/I, are used in many different application fields as they allow the flow of electricity in one direction while limiting the flow in the other direction. ES3DHE3_A/I can be used in a wide range of applications, such as:
  • Power conversion and rectification circuits
  • Relay control circuits
  • Clipper circuits
  • Switching and filtering
  • Voltage regulation
  • Automotive and industrial equipment

ES3DHE3_A/I Working Principle

ES3DHE3_A/I is a form of semiconductor diode consisting of two p-n junction diodes connected in series, with the anode of one diode connected to the cathode of the other. When the diode is forward biased, electrons are allowed to move freely between the n-type and p-type regions, resulting in a low voltage drop across the diode, while the reverse current is limited. The ES3DHE3_A/I has a fast response time and can handle high currents, making it suitable for applications requiring efficient power conversion.

The specific data is subject to PDF, and the above content is for reference

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ES3D-M3/57T Vishay Semic... 0.13 $ 1000 DIODE GEN PURP 200V 3A DO...
ES3DHE3J_A/I Vishay Semic... 0.18 $ 1000 DIODE GEN PURP 200V 3A DO...
ES3DHE3_A/I Vishay Semic... -- 3500 DIODE GEN PURP 200V 3A DO...
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ES3DHE3/9AT Vishay Semic... -- 1000 DIODE GEN PURP 200V 3A DO...
ES3D M6G Taiwan Semic... 0.08 $ 1000 DIODE GEN PURP 200V 3A DO...
ES3DV M6G Taiwan Semic... 0.08 $ 1000 DIODE GEN PURP 200V 3A DO...
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