Allicdata Part #: | ES3DHE3_A/IGITR-ND |
Manufacturer Part#: |
ES3DHE3_A/I |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 3A DO214AB |
More Detail: | Diode Standard 200V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | ES3DHE3_A/I Datasheet/PDF |
Quantity: | 3500 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES3D |
Description
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ES3DHE3_A/I Overview
ES3DHE3_A/I is a single rectifying diode, which belongs to a broad category of components that consists of switches and controllers that use semiconductor-based diodes. ES3DHE3_A/I is designed to provide a low voltage drop and high surge rating, making it a suitable choice for applications that require efficient power conversion.ES3DHE3_A/I Application Field
Diodes, including ES3DHE3_A/I, are used in many different application fields as they allow the flow of electricity in one direction while limiting the flow in the other direction. ES3DHE3_A/I can be used in a wide range of applications, such as:- Power conversion and rectification circuits
- Relay control circuits
- Clipper circuits
- Switching and filtering
- Voltage regulation
- Automotive and industrial equipment
ES3DHE3_A/I Working Principle
ES3DHE3_A/I is a form of semiconductor diode consisting of two p-n junction diodes connected in series, with the anode of one diode connected to the cathode of the other. When the diode is forward biased, electrons are allowed to move freely between the n-type and p-type regions, resulting in a low voltage drop across the diode, while the reverse current is limited. The ES3DHE3_A/I has a fast response time and can handle high currents, making it suitable for applications requiring efficient power conversion.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "ES3D" Included word is 32
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES3D-13-F | Diodes Incor... | -- | 18000 | DIODE GEN PURP 200V 3A SM... |
ES3D R7G | Taiwan Semic... | 0.09 $ | 4250 | DIODE GEN PURP 200V 3A DO... |
ES3D V7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D | ON Semicondu... | -- | 3000 | DIODE GEN PURP 200V 3A SM... |
ES3DPX | Nexperia USA... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A CF... |
ES3DBHR5G | Taiwan Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB R5G | Taiwan Semic... | 0.15 $ | 1700 | DIODE GEN PURP 200V 3A DO... |
ES3DB-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 200V 3A SM... |
ES3D-M3/57T | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3J_A/I | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/I | Vishay Semic... | -- | 3500 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHM6G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DV V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DVHR7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DB M4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DBHM4G | Taiwan Semic... | 0.12 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-M3/9AT | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ES3D-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3DB-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
ES3D/7T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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