
Allicdata Part #: | ESH2B-M3/5BT-ND |
Manufacturer Part#: |
ESH2B-M3/5BT |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
12800 +: | $ 0.07309 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 930mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 2µA @ 100V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The ESH2B-M3/5BT is a single diode rectifier that is used in many applications. It is a small, low-cost, high-reliability device, and is suitable for power systems that require voltage conversion, protection against overloads, flexibility, and easy installation. This article discusses the application field and working principle of ESH2B-M3/5BT.
Application Field
The ESH2B-M3/5BT is widely used in power electronic systems, such as renewable energy, motor drive and power electronics systems. It is also used in distributed power systems, motor drive systems, and other high-frequency switching applications. It is able to handle a wide range of voltages and power levels, making it suitable for multiple applications. It has a low forward voltage drop rate and is able to maintain high efficiency over a wide temperature range.
The use of the ESH2B-M3/5BT in switching applications is especially advantageous because it is able to switch with low power dissipation and high frequency without compromising its reliability. It is also capable of providing repetitive surge capability, a key feature in power electronics applications. Additionally, the ESH2B-M3/5BT has high breakdown voltage and is able to provide excellent long-term stability.
Working Principle
The ESH2B-M3/5BT works on the principle of reverse current blocking, where it allows current to pass in one direction and blocks current from passing in the opposite direction. This is possible because of the presence of a built-in junction in the rectifier. The built-in junction is composed of two electrodes, an anode and a cathode, which are separated by a dielectric material. When a forward voltage is applied, electrons are attracted to the anode and move away from the cathode resulting in a current flow. On the other hand, when a reverse voltage is applied the current is blocked, since the electrons are attracted to the cathode and are repelled away from the anode.
The ESH2B-M3/5BT is also able to provide variable current control, which is an important feature in switching applications. It can be adjusted between a lower and higher current rating to reduce power consumption or improve switching performance. This can be done using a custom built-in current regulator or by using a voltage regulator module. Additionally, the ESH2B-M3/5BT is able to provide overvoltage protection, which prevents system damage in overvoltage situations.
The ESH2B-M3/5BT is a reliable and cost-effective device that is suitable for a wide range of applications. It is able to provide excellent power conversion efficiency, along with a wide range of features such as high surge capability and variable current control. Moreover, the device is small in size and is easy to install.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ESH2CHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH227M050AH2AA | KEMET | 0.23 $ | 1977 | CAP ALUM 220UF 20% 50V RA... |
ESH2DHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PD-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PCHM3/84A | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2C-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M035AM7AA | KEMET | 0.51 $ | 1426 | CAP ALUM 2200UF 20% 35V R... |
ESH2DA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH2D R5G | Taiwan Semic... | 0.1 $ | 850 | DIODE GEN PURP 200V 2A DO... |
ESH2D-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH227M025AG3AA | KEMET | 0.15 $ | 1956 | CAP ALUM 220UF 20% 25V RA... |
ESH2PC-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PDHM3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PBHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2PD-M3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH225M400AG3AA | KEMET | 0.16 $ | 6596 | CAP ALUM 2.2UF 20% 400V R... |
ESH2B-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2PDHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PC-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M050AM3AA | KEMET | 0.64 $ | 2100 | CAP ALUM 2200UF 20% 50V T... |
ESH2CHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PBHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2CHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M050AN2AA | KEMET | 0.33 $ | 1000 | CAP ALUM 2200UF 20% 50V R... |
ESH2PD-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PDHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PD-M3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PBHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2CHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PB-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH227M050AH1AA | KEMET | 0.25 $ | 8027 | CAP ALUM 220UF 20% 50V RA... |
ESH227M010AE3AA | KEMET | 0.1 $ | 5354 | CAP ALUM 220UF 20% 10V RA... |
ESH2C-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2B-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2C-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
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