
Allicdata Part #: | ESH2PDHM3/84AGITR-ND |
Manufacturer Part#: |
ESH2PDHM3/84A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 2A DO220AA |
More Detail: | Diode Standard 200V 2A Surface Mount DO-220AA (SMP... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 980mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes - Rectifiers - Single
ESH2PDHM3/84A is a diode rectifier which primarily be used in the Application Field that requires a high breakdown voltage up to 1200V, like UPS, Switching Power Supply, Free Wheeling Diode, Bridge Rectifier, or any other application that mainly need to use a rectifying diode with high breakdown voltage capability.
The working principle of the ESH2PDHM3/84A is to use a solid state PN junction to convert AC input voltage into DC voltage, and at the same time, it also provides the protective function, which is blocking the flow of reverse current. It is usually applied a voltage across the terminals of the diode and current flows through the circuit. Generally speaking, it will act as an open switch when the external voltage across its terminals is reverse to its breakdown voltage, and it will act as a closed switch when the external voltage is forward enough such that the diode can be reach its Forward Voltage of about 2V.
ESH2PDHM3/84A also has several other critical characteristics, such as the Rectifying Efficiency and Reverse Recovery Time. Rectifying Efficiency is a critical factor in determining the output stability and life of the system. It\'s positive temperature coefficient can ensure a stable output even in a wide temperature range. The Reverse Recovery Time of the ESH2PDHM3/84A is the time for the diode to recover from reverse breakdown to its on-state, and the shorter the Reverse Recovery Time is the better the performance of the diode will be.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ESH2CHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH227M050AH2AA | KEMET | 0.23 $ | 1977 | CAP ALUM 220UF 20% 50V RA... |
ESH2DHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PD-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2DHE3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PCHM3/84A | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2C-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M035AM7AA | KEMET | 0.51 $ | 1426 | CAP ALUM 2200UF 20% 35V R... |
ESH2DA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH2D R5G | Taiwan Semic... | 0.1 $ | 850 | DIODE GEN PURP 200V 2A DO... |
ESH2D-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH227M025AG3AA | KEMET | 0.15 $ | 1956 | CAP ALUM 220UF 20% 25V RA... |
ESH2PC-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PDHM3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PBHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2PD-M3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH225M400AG3AA | KEMET | 0.16 $ | 6596 | CAP ALUM 2.2UF 20% 400V R... |
ESH2B-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2PDHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PC-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M050AM3AA | KEMET | 0.64 $ | 2100 | CAP ALUM 2200UF 20% 50V T... |
ESH2CHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PBHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2CHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PCHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH228M050AN2AA | KEMET | 0.33 $ | 1000 | CAP ALUM 2200UF 20% 50V R... |
ESH2PD-E3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PDHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PD-M3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
ESH2PBHM3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2CHE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2PB-E3/84A | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH227M050AH1AA | KEMET | 0.25 $ | 8027 | CAP ALUM 220UF 20% 50V RA... |
ESH227M010AE3AA | KEMET | 0.1 $ | 5354 | CAP ALUM 220UF 20% 10V RA... |
ESH2C-M3/52T | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
ESH2B-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ESH2C-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
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