| Allicdata Part #: | ESH2DHE3_A/I-ND |
| Manufacturer Part#: |
ESH2DHE3_A/I |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 2A DO214AA |
| More Detail: | Diode Standard 200V 2A Surface Mount DO-214AA (SMB... |
| DataSheet: | ESH2DHE3_A/I Datasheet/PDF |
| Quantity: | 1000 |
| 6400 +: | $ 0.09160 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 930mV @ 2A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 25ns |
| Current - Reverse Leakage @ Vr: | 2µA @ 200V |
| Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
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ESD2DHE3_A/I is a diode rectifier single device. Diode rectifier is a popular electrical component that has very broad applications in several branches of modern industry, from automation and aerospace to medical equipment and electronics. It is commonly used in electronic circuits to prevent reverse current, control voltage and current, and provide protection for sensitive implementations. This particular type of rectifier is particularly useful for applications that require a high power solution with reverse current protection and fast switching speed.
The ESD2DHE3_A/I rectifier is a unique combination of components that features a reverse current protection diode, a fast switching rectifier and a Zener diode. The reverse current protection diode acts as a safety feature to protect against the potential damage caused by reverse current which might occur when input voltage is reversed. The fast switching rectifier helps to reduce the overall circuit power consumption, since less power is required for switching. The Zener diode, on the other hand, helps to reduce the voltage drop across the rectifier and thus increases the efficiency of the overall circuit.
The ESD2DHE3_A/I rectifier can be used in a wide range of applications. In consumer electronics and communication systems, it can be used as a switching element, to switch between two voltage sources. In lithium-ion battery packs, the diode rectifier ensures that a minimal amount of reverse current flows between the cell and battery pack, thus preventing potential damage. The device can also be used in high-power audio amplifiers, vehicle charging systems, and consumer appliance power supplies.
The working principle of the ESD2DHE3_A/I is based on the operation of the diode rectifier. When a current is sent through the rectifier, an anode and a cathode are created. The anode is connected to the input voltage, and the cathode is connected to the switch. When the switch is activated, the current passes through the diode rectifier and is allowed to flow through the circuit. The voltage at the output side will remain constant regardless of any changes in the input voltage, ensuring a stable level of power.
The fast switching rectifier component gives this diode rectifier a distinct advantage when it comes to applications requiring high power solutions with reverse current protection and fast switching speeds. The Zener diode further increases the efficiency of the overall circuit by reducing the voltage drop across the rectifier. The reverse current protection feature helps to prevent damage caused by accidental reverse currents, making it safer for use in sensitive circuits.
The ESD2DHE3_A/I diode rectifier can be used in a wide range of applications, from consumer electronics and communication systems, to high-power audio amplifiers and vehicle charging systems. With its high power and current ratings, fast switching speeds, and reverse current protection features, the ESD2DHE3_A/I is an ideal choice for a variety of applications requiring reliable and efficient power management.
The specific data is subject to PDF, and the above content is for reference
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| ESH2CHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2C M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
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| ESH2C-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 2A DO... |
| ESH2DHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2DHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
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| ESH2PDHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| ESH2D-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
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ESH2DHE3_A/I Datasheet/PDF