ESH2B M4G Allicdata Electronics
Allicdata Part #:

ESH2BM4G-ND

Manufacturer Part#:

ESH2B M4G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 2A DO214AA
More Detail: Diode Standard 100V 2A Surface Mount DO-214AA (SMB...
DataSheet: ESH2B M4G datasheetESH2B M4G Datasheet/PDF
Quantity: 1000
6000 +: $ 0.06870
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ESH2B M4G has become a popular choice within the application field of diodes, rectifiers, and single devices. As single-die devices, they offer high reliability and performance while being easily implementable. The ESH2B M4G is composed of two parts; the first is a diode array, and the second is an integrated circuit, or IC. The diode array is simply the collection of semiconductors which act as diodes or rectifiers. This array helps to minimize the reverse leakage current in the device, resulting in improved reliability and consistency. The IC is a power management and control section that helps regulate the functionality, such as current and voltage, of the device.

The ESH2B M4G is a 600V, 1mΩ, bi-directional diode array, rectifier device. This makes it suitable for applications such as AC/DC power conversion, battery charging, and other power delivery systems. The M4G also offers a ‘shutdown’ feature which is designed to safely power off the device in the event of a fault or over temperature conditions. This feature is beneficial in a variety of applications.

The working principle of the ESH2B M4G is relatively simple; in its forward direction, it provides a low impedance path, allowing electrons to flow easily through the device. This results in a low voltage drop and improved power efficiency. In its reverse direction, the device provides a high impedance or resistance, thereby eliminating any damage caused by backflow. The device also provides thermal protection in order to protect the device from high temperatures, thereby improving its performance and lifetime.

When the ESH2B M4G is used in combination with other components, it offers several advantages to the design. For one, it can provide voltage and current regulation in order to regulate the power supply in a system. Furthermore, it can help reduce power losses in the circuit due to its low-forward voltage drop and reverse high-impedance characteristics. As an added bonus, the M4G can also be used to protect against electrostatic discharges, which is critical for sensitive electronic circuits.

In conclusion, the ESH2B M4G is an ideal choice for applications in diodes, rectifiers, and single devices. Its diode array is capable of providing low-reverse leakage currents, while its integrated circuit can regulate the functionality of the device. The M4G also offers several advantages due to its low-voltage drop and reverse high-impedance characteristics, as well as its ability to provide thermal protection and protection against electrostatic discharge.

The specific data is subject to PDF, and the above content is for reference

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