Allicdata Part #: | ESH2BM4G-ND |
Manufacturer Part#: |
ESH2B M4G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ESH2B M4G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.06870 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 2µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The ESH2B M4G has become a popular choice within the application field of diodes, rectifiers, and single devices. As single-die devices, they offer high reliability and performance while being easily implementable. The ESH2B M4G is composed of two parts; the first is a diode array, and the second is an integrated circuit, or IC. The diode array is simply the collection of semiconductors which act as diodes or rectifiers. This array helps to minimize the reverse leakage current in the device, resulting in improved reliability and consistency. The IC is a power management and control section that helps regulate the functionality, such as current and voltage, of the device.
The ESH2B M4G is a 600V, 1mΩ, bi-directional diode array, rectifier device. This makes it suitable for applications such as AC/DC power conversion, battery charging, and other power delivery systems. The M4G also offers a ‘shutdown’ feature which is designed to safely power off the device in the event of a fault or over temperature conditions. This feature is beneficial in a variety of applications.
The working principle of the ESH2B M4G is relatively simple; in its forward direction, it provides a low impedance path, allowing electrons to flow easily through the device. This results in a low voltage drop and improved power efficiency. In its reverse direction, the device provides a high impedance or resistance, thereby eliminating any damage caused by backflow. The device also provides thermal protection in order to protect the device from high temperatures, thereby improving its performance and lifetime.
When the ESH2B M4G is used in combination with other components, it offers several advantages to the design. For one, it can provide voltage and current regulation in order to regulate the power supply in a system. Furthermore, it can help reduce power losses in the circuit due to its low-forward voltage drop and reverse high-impedance characteristics. As an added bonus, the M4G can also be used to protect against electrostatic discharges, which is critical for sensitive electronic circuits.
In conclusion, the ESH2B M4G is an ideal choice for applications in diodes, rectifiers, and single devices. Its diode array is capable of providing low-reverse leakage currents, while its integrated circuit can regulate the functionality of the device. The M4G also offers several advantages due to its low-voltage drop and reverse high-impedance characteristics, as well as its ability to provide thermal protection and protection against electrostatic discharge.
The specific data is subject to PDF, and the above content is for reference
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