ESH2C-M3/5BT

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Diodes are semiconductor devices which are used to allow current to pass in one direction only, and to block the flow of current in the opposite direction. Rectifier diodes are thus used in applications, such as DC power supplies, to convert AC power, into DC power.

The ESH2C-M3/5BT is an ultra-fast, zero recovery dual Schottky rectifier diode which has been designed with reduced power dissipation, improved forward recovery characteristics and a high forward surge capability to meet the demands of high frequency, high power applications.

ESH2C-M3/5BT application field mainly include power supplies, solar energy converters and DC/DC converters. Due to its low forward-voltage drop, the device is well suited to areas such as telecom supplies, PC supplies and portable equipment.

It has an operating junction temperature of -55°C to +150°C, and a storage temperature range of -55°C to +150°C. It also has a maximum repetitive peak reverse voltage of 30V, and a maximum instantaneous forward current of 10A.

The working principle of the ESH2C-M3/5BT can best be understood by looking at the following diagram:

The ESH2C-M3/5BT consists of two Schottky diodes connected in inverse parallel. When a voltage is applied to the anode (positive) side of the diode, a forward bias voltage is produced across the device, and current passes through. If the same voltage is then applied to the cathode (negative) side of the diode, a reverse bias voltage is created, and current is blocked.

The combination of the two Schottky diodes provides a fast switching action, with ultra-low turn-on and reverse recovery times. This results in reduced energy loss, improved transient response and improved overall system efficiency.

In addition, the device has high surge capability, and is therefore suitable for use in applications where high currents may be encountered, such as DC/DC converters, solar energy converters and power supplies.

The ESH2C-M3/5BT is a high-performance, single diode rectifier which is designed to meet the demands of high frequency, high power applications. With its ultra-fast, zero recovery characteristics, low forward voltage drop, and high surge capability, it is an ideal choice for use in a variety of applications.

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