FCA20N60

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The FCA20N60 is an advanced power metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Fairchild Semiconductor. It is one of the most commonly used power MOSFETs, thanks to its excellent performance characteristics, high current-carrying capacity, and low on-state resistance. It finds its usage in a variety of power applications, such as motor controls, power supplies, switched-mode power supplies (SMPSs), and automotive applications, among others.

The FCA20N60 is built with a high-voltage N-channel that offers excellent switching speed, low on-state resistance, and high breakdown voltage. Its main features include a drain-source breakdown voltage of 600 V, an on-state resistance of 11.2 mΩ max, an avalanche-rated drain-source diode, and an operating temperature up to 175°C. It is available in both a TO-262 and a TO-220F package with rated continuous drain current of 20 A and a maximum pulsed drain current of 80 A.

The FCA20N60’s main application fields are motor controls, power supplies, SMPSs, and automotive applications. Motor controls require high power switching, and the FCA20N60’s high current-carrying capacity makes it well suited for this purpose. The low-on-state resistance of the FCA20N60 makes it the preferred choice for power supplies and SMPSs, as it reduces power losses due to conduction. Additionally, the FCA20N60’s high-voltage switching capability and robust build make it suitable for use in automotive applications.

The FCA20N60 operates by allowing current to flow in one direction when a voltage is applied to the gate terminal. This voltage, which is comparatively lower than the source voltage, controls the amount of current that is allowed to flow between the drain and the source. If the source voltage remains constant and the gate voltage is increased, more current will be allowed to flow, leading to an increase in the drain current. Conversely, if the gate voltage is decreased, the drain current will also decrease.

In summary, the FCA20N60 is a versatile and reliable advanced power MOSFET, suitable for a variety of applications, including motor controls, power supplies, SMPSs, and automotive applications. It features a drain-source breakdown voltage of 600 V, an on-state resistance of 11.2 mΩ max, an avalanche-rated drain-source diode, and an operating temperature up to 175°C. Additionally, it offers excellent switching speed and low on-state resistance, making it an ideal choice for all types of power applications.

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