Allicdata Part #: | FCA20N60FS-ND |
Manufacturer Part#: |
FCA20N60FS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 20A TO-3PN |
More Detail: | N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-... |
DataSheet: | FCA20N60FS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Base Part Number: | FCA20N60 |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3080pF @ 25V |
Vgs (Max): | ±30V |
Series: | SuperFET™ |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FCA20N60FS Application Field and Working Principle
FCA20N60FS is a N-channel enhancement-mode power MOSFET produced by Fairchild Semiconductor. It belongs to the family of SuperFET MOSFETs. This MOSFET is composed of a vertical double difused structure, which makes it suitable for use in a wide variety of industrial applications.
Features and Benefits
Due to its unique design, containing a high MOSFET dielectric and a low lead frame, FCA20N60FS offers high switching performance, low on-resistance and low-gate charge:
- High switching frequency - up to 45 MHz
- Low on-resistance - as low as 20mΩ
- Low input-capacitance and gate-charge
- Good temperature stability
In addition, the device offers a very low internal gate charge, which allows a higher current rating and a smaller gate resistor. As well, the shape of the drain-to-source current-data sheet making it suitable for various load ranges.
Applications
FCA20N60FS can be used in various applications that require high switching performance, such as motor control, power converter/inverters, dc/dc converters, switching power supplies, charge pumps and amplifiers. It is also used in Next Generation Cellular Systems (NGCS) due to its low on-resistance rating.
Working Principle
FCA20N60FS is a N-channel enhancement mode MOSFET. This means that when voltage is applied to the gate, holes are repelled from the channel and electrons are attracted to create a channel between the source and drain. When voltage is removed from the gate, the electrons move opposite and the gate capacitance prevents the drain-to-source current.
When the gate voltage is between 0V and the threshold voltage, no current flows through the channel. But when the applied voltage is greater than the threshold voltage and when the MOSFET is in the enhancement mode, current can flow through the channel.
The drain current is controlled using the gate voltage, which increases with a lower threshold voltage. As the gate voltage increases further and reaches the saturation region, a drain current that is proportional to the gate charge appears.
The performance characteristics of the MOSFET are determined by the amount of gate current, the voltage applied to the gate, the MOSFET operating temperature, and the total capacitance between the gate and source pins.
Conclusion
The FCA20N60FS is a vertically double difused N-channel enhancement mode power MOSFET with high switching frequency, low on-resistance and low gate charge. Due to its unique capabilities, it is suitable for use in a wide variety of industrial applications. In addition, it offers very low internal gate charge for a higher current rating, making it suitable for various load ranges.
The specific data is subject to PDF, and the above content is for reference
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